The invention provides a forming method of a semiconductor device and a grid electrode. In the forming method of the semiconductor device, a photoresist layer arranged above a hard mask layer is subjected to patterning, and after photoresist patterns are formed, the photoresist patterns are subjected to softening processing process, so that the surface roughness degree of the photoresist patterns is effectively reduced, then, the photoresist patterns are used as marks for etching the partial hard mask layer, the remained photoresist at the bottom of the side wall of the photoresist patterns is removed, then, the photoresist patterns are subjected to tightening processing process, the photoresist patterns are cured, meanwhile, a decoration layer is formed on the surfaces of the photoresist patterns, the smoothness of the side wall surface of the photoresist patterns is improved, the quality of the hard mask patterns subsequently obtained by using the photoresist patterns as the marks for etching the hard mask layer can be improved, and further, the structure precision of the semiconductor device obtained after the hard mask patterns are used as the masks for etching the materials to be etched in the subsequent steps can be improved, so that the performance of the semiconductor device is optimized.