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Sensing control signal generation circuit and semiconductor memory device including the same

A storage device and control signal technology, applied in the field of semiconductor storage devices, can solve the problems of increasing the peak current of semiconductor storage devices and the like

Active Publication Date: 2017-06-30
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, since the voltages of all the bit lines are changed simultaneously, the peak current of the semiconductor memory device is increased

Method used

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  • Sensing control signal generation circuit and semiconductor memory device including the same
  • Sensing control signal generation circuit and semiconductor memory device including the same
  • Sensing control signal generation circuit and semiconductor memory device including the same

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Embodiment Construction

[0024] Various embodiments will be described in more detail below with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the invention to those skilled in the art. Throughout this disclosure, like reference numerals refer to like parts throughout the various figures and embodiments of the invention. It is also to be noted that in this specification, "connected / coupled" not only means that one component is directly coupled to another component, but also means that one component is indirectly coupled to another component via an intermediate component. It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, com...

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Abstract

The present invention relates to a sensing control signal generation circuit and a semiconductor memory device including the same. In an embodiment, a semiconductor memory device may include a memory block suitable for including a plurality of memory cells coupled in series and a plurality of cell strings respectively coupled to a plurality of bit lines, page buffers suitable for being coupled to the respective bit lines in response to a sensing control signal and each suitable for sensing a voltage of each of the bit lines transferred to a sensing node and storing data corresponding to the results of the sensing or temporarily storing data to be programmed into a selected memory cell, and a sensing control signal generation unit suitable for generating the sensing control signal having a form of a ramping signal rising at a constant slope during the program operation.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2015-0185172 filed on December 23, 2015, which is hereby incorporated by reference in its entirety. technical field [0003] Exemplary embodiments of the present invention relate to a semiconductor design technology, and more particularly, to a semiconductor memory device including a sensing control signal generating unit. Background technique [0004] Semiconductor memory devices are basically classified into volatile memory devices and nonvolatile memory devices. [0005] Volatile memory devices have faster read and write speeds, but data stored in them is lost when power to the device is removed. Non-volatile memory devices have slower read and write speeds, but retain data stored therein when power to the device is interrupted. Therefore, nonvolatile memory devices are used to store data that needs to be retained regardless of whether power is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/26G11C16/10G11C16/14
CPCG11C16/10G11C16/14G11C16/26G11C16/3404G11C16/0483G11C16/12G11C16/24
Inventor 金英镒
Owner SK HYNIX INC