Fabrication method of beam-mass structure based on laser combined anisotropic etching

An anisotropic, mass block technology, applied in the field of beam-mass block structure preparation, can solve problems such as gaps and high control accuracy, and achieve the effects of cost reduction, high process accuracy, and low-cost manufacturing

Active Publication Date: 2019-02-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

The main reason for limiting the wide application of laser processing in sensor manufacturing is that the control accuracy of laser ablation depth is different from that of deep reactive ion etching technology, and it is difficult to maintain high control accuracy while ensuring processing efficiency

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  • Fabrication method of beam-mass structure based on laser combined anisotropic etching
  • Fabrication method of beam-mass structure based on laser combined anisotropic etching
  • Fabrication method of beam-mass structure based on laser combined anisotropic etching

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Embodiment Construction

[0046] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0047] see Figure 1 to Figure 20It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic concept of the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the ...

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Abstract

The invention provides a preparation method of a beam-mass structure based on laser combined anisotropic etching. The preparation method comprises the following steps: 1) providing a (111) silicon wafer; 2) forming a first deep groove in a back surface of the (111) silicon wafer by employing a laser machining process; 3) forming a second deep groove in a front surface of the (111) silicon wafer; 4) respectively forming a first oxide layer on a surface of the (111) silicon wafer as well as on a side surface and a bottom part of each of the first deep groove and the second deep groove; 5) forming a third deep groove in the front surface of the (111) silicon wafer; 6) respectively forming a second oxide layer on surfaces of the first oxide layers as well as on a side surface and a bottom part of the third deep groove; and 7) releasing a beam by employing a reactive ion etching process and an anisotropic etching process. The beam-mass structure is formed by employing the laser machining process and in combination with the reactive ion etching process and the anisotropic etching process, so the cost of the whole process can be reduced; and a thickness of a beam structure is determined by deep reactive ion etching performed on the front surface of the (111) silicon wafer, and the process precision is high.

Description

technical field [0001] The invention belongs to the technical field of micro-nano processing, and in particular relates to a method for preparing a beam-mass structure based on laser combined with anisotropic corrosion. Background technique [0002] Micro Electro Mechanical System technology (MEMS, Micro Electro Mechanical System) uses a process compatible with integrated circuits to realize the integration of sensors and actuators on silicon chips, which is a branch of integrated circuits. At present, the pillar products in the field of MEMS technology include acceleration sensors, micro-mechanical gyroscopes, pressure sensors, microphones, and digital projection chips. Among them, acceleration sensors and micromachined gyroscopes generally adopt a beam-mass structure, and are usually fabricated by surface micromachining or bulk micromachining technology. Since the performance of inertial devices such as acceleration sensors and micro-mechanical gyroscopes is related to ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/0015
Inventor 杨恒戈肖鸿吴燕红豆传国王小飞孙珂李昕欣
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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