Black phosphorus optical modulator and manufacturing method thereof
A technology of modulator and phosphorescence, which is applied in the field of electronics, can solve the problems of lack of stability, limit the research and industrial application of black phosphorus, and achieve the effect of simple preparation method, excellent semiconductor and photoelectric performance, and reduced size
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[0045] The second aspect of the embodiment of the present invention provides a method for preparing a black phosphorescent modulator, including:
[0046] providing a slot-type slide and a black phosphorescent modulator body, the slot-type slide comprising a groove and an upper surface adjacent to the groove, the black phosphor modulator body is accommodated in the groove;
[0047] A cover glass is provided, the shadowless glue is coated on the upper surface of the grooved glass or the surface of the cover glass, and the cover glass is covered on the upper surface to seal the groove, after curing , to obtain a black phosphorescent modulator.
[0048] In an embodiment of the present invention, the black phosphorescent modulator body is accommodated under a vacuum condition or an inert gas condition.
[0049] In the embodiment of the present invention, the curing operation includes: firstly curing for 6s-10s, then removing excess shadowless glue, and then curing completely to ob...
Embodiment 1
[0056] A black phosphorescent modulator comprising:
[0057] Black phosphorescent modulator body, groove glass and cover glass, the groove glass includes a groove, the black phosphorescent modulator body is accommodated in the groove, and the cover glass covers the groove glass to seal the groove; black The body of the phosphorescent modulator includes a first electrode, a second electrode, a substrate, an insulating layer and a black phosphorus layer. The substrate, the insulating layer and the black phosphorus layer are sequentially stacked in the groove, and the black phosphorus layer and the insulating layer include layers facing opposite directions. The extension end of the extension is provided with a first electrode on the extension end of the black phosphorus layer, and a second electrode is arranged on the extension end of the insulating layer. Among them, the depth of the groove is 100nm, the material of the substrate is silicon, the width of the substrate is 200nm, ...
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