Programming method for storage unit

A technology of memory cells and programming methods, applied in the field of memory, can solve the problems of high programming power consumption, high current, slow programming speed, etc., and achieve the effects of reducing programming current, improving programming speed, and reducing programming power consumption.

Inactive Publication Date: 2017-07-07
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the existing programming method is to directly apply a fixed high voltage to the gate and drain of the memory cell, the programming

Method used

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  • Programming method for storage unit
  • Programming method for storage unit

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0026] image 3 It is a flow chart of a method for programming a memory cell provided in Embodiment 1 of the present invention, and this embodiment is applicable to programming a memory cell. join image 3 The programming method of the storage unit provided in this embodiment specifically includes the following steps:

[0027] S110. Receive a programming instruction.

[0028] By writing program codes, the flash memory can be controlled to perform three main operations, namely read operation, write operation and erase operation, wherein the write operation is also called programming operation, that is, to complete the operation of writing 0 to the storage unit; in the above steps Receiving a programming instruction specifically refers to receiving an operation instruction of writing 0 to a certain storage unit.

[0029] S120, start the charge pump according to the programming instruction, and open the path between the charge pump and the gate and drain of the storage unit wh...

Embodiment 2

[0043] Figure 6 It is a flow chart of a memory cell programming method provided by Embodiment 2 of the present invention. This embodiment is further optimized on the basis of the above embodiments, and the operation of accumulating the number of programming failures is added. The benefits of such optimization are: Unrestricted programming operations on some memory cells are avoided, causing the entire program to fall into an infinite loop. join Figure 6 The programming method of the storage unit provided in this embodiment specifically includes the following steps:

[0044] S210. Receive a programming instruction.

[0045] S220, start the charge pump according to the programming instruction, and open the path between the charge pump and the gate and drain of the storage unit when the output voltage of the charge pump starts to rise from the initial voltage;

[0046] S230 , check whether the current state of the memory cell is successfully programmed, if so, execute step 2...

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Abstract

The invention discloses a programming method for a storage unit. The method comprises the steps of receiving a programming instruction; starting a charge pump according to the programming instruction, and when an output voltage of the charge pump is increased from an initial voltage, switching on paths from the charge pump to the gate and the drain of the storage unit; and checking whether a current state of the storage unit is a programming success state or not, and if yes, ending current programming operation, otherwise, restarting the charge pump and switching on the paths from the charge pump to the gate and the drain of the storage unit, until the programming succeeds. According to the programming method for the storage unit, provided by an embodiment of the invention, by switching on the paths from the charge pump to the gate and the drain of the storage unit when the output voltage of the charge pump is increased from the initial voltage, a system can perform programming in a whole process that the charge pump outputs a high voltage, so that the programming speed of the storage unit is increased and the power consumption of programming is reduced.

Description

technical field [0001] The embodiment of the present invention relates to the technical field of storage, and in particular to a programming method of a storage unit. Background technique [0002] Non-volatile flash memory (nor flash / nand flash) is a very common memory chip, which has the advantages of random access memory (RAM) and read-only memory (Read-Only Memory, ROM). It will not be lost. It is a memory that can be electrically erased and written in the system. At the same time, its high integration and low cost make it the mainstream of the market. The Flash chip is composed of thousands of internal storage units, each storage unit stores one bit of data, multiple storage units form a page, and multiple pages form a block. It is precisely because of this special physical structure that in nor flash / In nand flash, data is read / written (program operation) in units of pages, and data is erased in units of blocks. [0003] In a Flash chip, a storage unit can be regarde...

Claims

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Application Information

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IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/34
Inventor 舒清明张赛张建军刘江
Owner GIGADEVICE SEMICON (BEIJING) INC
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