Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash memory and manufacturing method therefor

A manufacturing method and memory technology, which are applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of easy interference and unreliable performance of flash memory, and achieve the effect of avoiding mutual interference.

Active Publication Date: 2017-07-14
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, as the size of flash memory cells decreases, the distance between adjacent flash memory cells becomes smaller, and interference between the two is prone to occur when reading, writing, and erasing, which makes the performance of flash memory unreliable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory and manufacturing method therefor
  • Flash memory and manufacturing method therefor
  • Flash memory and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] As mentioned in the background technology, in the prior art, as the size decreases, the distance between adjacent flash memory cells becomes smaller, and interference between the two is prone to occur when reading, writing, and erasing, which will cause poor performance of the flash memory. reliable. After analysis, the inventor finds that the reason for this is: in order to electrically insulate the adjacent bit lines, isolation trenches are formed in the semiconductor substrate between the bit lines, and the trenches are filled with dielectric layers. In addition, for Electrically insulate each column of floating gate stack structures, and a dielectric layer is also filled between each column of floating gate stack structures. The material of the above two dielectric layers is generally silicon dioxide, and the dielectric constant is relatively large (generally about 4.2). , which causes the parasitic capacitance to be too large during the charging and discharging pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory and a manufacturing method therefor. A filling process with relatively poor filling performance is adopted in filling gate stacking structures of adjacent memory transistors so as to form air gaps in a semiconductor substrate between bit lines in each column, and between floating gate stacking structures in each column below word lines. The dielectric constant of the air gaps is less than that of a silicon dioxide dielectric layer, so that parasitic capacitance generated in the processes of reading, writing and erasing can be lowered, and mutual interference between adjacent memory transistors can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a flash memory and a manufacturing method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, the development of flash memory (flash memory) is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on, so it is widely used in various memories that need to store data that will not disappear due to power interruption, and that need to be read and written repeatedly. Moreover, flash memory has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as micro-el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/115H01L21/762
CPCH01L21/762H01L21/76224H10B41/00H10B69/00
Inventor 仇圣棻孔繁生
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com