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Laminated structure and preparation method thereof

A technology of laminated structure and material layer, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as disconnection and difficulty in climbing, and achieve the effect of improving product yield

Inactive Publication Date: 2017-07-14
HEFEI BOE OPTOELECTRONIC TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the depth of the via hole is too large, especially for the current organic film via hole, its depth is dozens of times the thickness of the upper conductive layer. Such a high thickness difference can easily cause the conductive layer to break due to the difficulty of climbing the hole. risk

Method used

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  • Laminated structure and preparation method thereof
  • Laminated structure and preparation method thereof
  • Laminated structure and preparation method thereof

Examples

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Embodiment Construction

[0036] It should first be noted that, unless the context clearly dictates otherwise, as used herein and in the appended claims, the singular includes the plural and vice versa. Thus, when referring to the singular, the plural of the corresponding term will generally be included. Similarly, the words "comprise" and "include" are to be interpreted as being inclusive and not exclusive. Likewise, the terms "include" and "or" should be construed as inclusive, unless such an interpretation is expressly prohibited herein. Where the term "example" is used herein, particularly when it follows a group of terms, said "example" is exemplary and explanatory only, and should not be considered to be exclusive or inclusive .

[0037] Also, in the drawings, the thicknesses and regions of layers are exaggerated for clarity. It will be understood that when a layer, region, or component is referred to as being “on” another component, it can be directly on the other component or other component...

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PUM

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Abstract

The invention relates to a laminated structure and a preparation method thereof. The laminated structure comprises a substrate, at least one material layer positioned on the substrate, and a through hole penetrating through at least part of the at least one material layer, wherein the through hole is provided with a stepped side surface. The laminated structure further comprises another material layer conformally covering the side surface of the through hole. A ratio of the thickness of the at least one material layer to that of the other material layer is greater than 10. The laminated structure provided by the invention can reduce a risk of wire breakage due to difficult material climbing when a material covers the through hole, so that a product yield is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a stacked structure and a manufacturing method thereof. Background technique [0002] With the continuous promotion of flat panel display technology, the technology of thin film transistor (TFT) has also been developed rapidly. The continuous increase in the number of mask layers makes the via hole phenomenon more common in the TFT fabrication process. When the depth of the via hole is too large, especially for the current organic film via hole, its depth is dozens of times the thickness of the upper conductive layer. Such a high thickness difference can easily cause the conductive layer to break due to the difficulty of climbing the hole. risk. Contents of the invention [0003] Embodiments of the present invention provide a laminated structure and a preparation method thereof, which can reduce the risk of disconnection due to the difficulty ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1244H01L27/1259H01L27/1248H01L27/1288H01L21/76885H01L29/42372H01L27/127
Inventor 元淼赵娜
Owner HEFEI BOE OPTOELECTRONIC TECH CO LTD
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