Diamond wire cutting liquid for large-size silicon wafer

A technology of diamond wire cutting and silicon wafer cutting fluid, which is applied in the direction of lubricating composition and petroleum industry, etc. It can solve the problems of poor surface quality of silicon wafers, large amount of cutting fluid, high wire breakage rate, etc., achieves strong cleaning ability and reduced consumption , the effect of improving performance

Active Publication Date: 2021-10-26
江苏捷捷半导体新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem solved by the present invention is to solve the problems existing in the prior art, such as large amount of cutting fluid, poor surface quality of silicon wafers, high wire breakage rate and high cutting rate when cutting large-size silicon wafers.

Method used

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  • Diamond wire cutting liquid for large-size silicon wafer
  • Diamond wire cutting liquid for large-size silicon wafer

Examples

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Embodiment 1

[0033] This embodiment provides a diamond wire cutting fluid for large-sized silicon wafers, which consists of 15 parts of solubilizer polyethylene glycol, 25 parts of surfactant alkylphenol polyoxyethylene ether, and 100 parts by total mass. 12 parts of defoaming agent acetylene glycol polyether, 1.5 parts of defoaming agent GPE type polyoxyethylene polyoxypropylene glyceryl ether, 10 parts of penetrant isomeric tridecyl alcohol polyoxyethylene ether, emulsifier sorbitan monooleic acid 2 parts of ester, 5 parts of polyoxyethylene sorbitan monostearate as emulsifier, 0.5 part of acrylic acid homopolymer as dispersant, 0.5 part of methyl benzotriazole as antirust agent, and 0.5 part of fungicide lauryl trimethyl Add 1 part of ammonium chloride in turn to the stirring tank, stir for 20 minutes, then add the remaining amount of deionized water, mix and stir for 60 minutes, and obtain a large-size silicon wafer diamond wire cutting fluid.

Embodiment 2

[0035] This embodiment provides a diamond wire cutting fluid for large-sized silicon wafers, which consists of 10 parts by mass of the total mass parts: 10 parts of polyethylene glycol as a solubilizer, and 30 parts of allyl alcohol polyoxyalkyl ether as a surfactant , 15 parts of dodecynediol defoamer, 1.5 parts of GP glycerol polyether defoamer, 12 parts of isooctyl alcohol polyoxyethylene ether phosphate penetrant, 2 parts of sorbitan monooleate emulsifier , emulsifier polyoxyethylene sorbitan monostearate 3 parts, dispersant acrylic acid homopolymer 0.5 part, antirust agent methyl benzotriazole 0.5 part, fungicide dodecyl trimethyl chloride Add 1 part of ammonium into the stirring tank in turn, stir for 30 minutes, then add the remaining amount of deionized water, and mix and stir for 60 minutes to obtain a large-size silicon wafer diamond wire cutting fluid.

Embodiment 3

[0037] This embodiment provides a diamond wire cutting fluid for large-sized silicon wafers, which is composed of 100 parts by total mass: 12 parts of propylene glycol, and 30 parts of surfactant six-carbon to eight-carbon fatty alcohol polyoxyethylene polyoxypropylene ether 13 parts, defoamer acetylene glycol polyether 13 parts, defoamer GPE type polyoxyethylene polyoxypropylene glyceryl ether 1.5 parts, penetrant isomeric tridecyl alcohol polyoxyethylene ether 14 parts, emulsifier monoglyceride fatty acid glyceride 1 part, emulsifier sorbitan monooleate 5 parts, dispersant phosphonocarboxylic acid copolymer 0.5 part, antirust agent methyl benzotriazole 0.5 part, fungicide dodecyl trimethyl chloride Add 1 part of ammonium chloride into the stirring tank in turn, stir for 25 minutes, then add the remaining amount of deionized water, and mix and stir for 60 minutes to obtain a large-size silicon wafer diamond wire cutting fluid.

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Abstract

The invention discloses diamond wire cutting liquid for a large-size silicon wafer. The diamond wire cutting liquid comprises the following components in parts by mass: 20-60 parts of a surfactant, 10-40 parts of a penetrating agent, 0.5-20 parts of a defoaming agent, 5-30 parts of a solubilizer, 3-10 parts of an emulsifier, 0.1-2 parts of a dispersing agent and the balance of deionized water. The large-size silicon wafer cutting fluid has the advantages that the large-size silicon wafer cutting fluid has excellent permeation, lubrication and cleaning effects, a stable oil-in-water system can be formed after the large-size silicon wafer cutting fluid is dissolved in water, the silicon powder can be efficiently dispersed, silicon powder cuttings and organic residues can be prevented from being gathered in equipment, adhesion and pipe blockage are prevented, the usage amount of the cutting liquid can be reduced, and the difficulty of silicon wafer cleaning and wastewater treatment can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of silicon crystal cutting, in particular to a large-size silicon chip diamond wire cutting fluid. Background technique [0002] With the rapid development of the photovoltaic industry, the cost of solar power generation has dropped significantly. Silicon wafers are the basic materials of the photovoltaic industry, and slicing is the main process that determines the quality of silicon wafers. The stress, surface and subsurface damage, and chipping of silicon wafers generated during slicing will seriously affect the conversion efficiency of photovoltaic cells. The performance is one of the key factors affecting the efficiency and quality of silicon wafer cutting. [0003] In order to reduce the cost of photovoltaic power generation and improve production efficiency, the size of silicon wafers has gradually increased from 166mm to 182mm and 210mm. The increase in the size of silicon wafers has brought new di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C10M173/00C10N30/04C10N30/06C10N30/12C10N30/16C10N30/18
CPCC10M173/00C10M2207/289C10M2209/104C10M2209/108C10M2209/103C10M2209/107C10M2209/109C10M2209/084C10M2215/04C10M2215/223C10M2225/04C10M2219/044C10M2221/02C10M2207/022C10M2207/046C10N2030/04C10N2030/06C10N2030/12C10N2030/16C10N2030/18C10N2030/26
Inventor 郭熹刘治洲王波
Owner 江苏捷捷半导体新材料有限公司
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