Device for disassembling electrostatic chuck

Abstract

The invention provides a device for disassembling an electrostatic chuck and belongs to the technical field of semiconductors. The device is used for improving the efficiency for disassembling the electrostatic chuck and comprises multiple sets of lever structures, a force application component and a base frame. Each set of lever structures comprises a lever and a lifting part, wherein the force application end of the lever is hinged to the force application component, the force transmitting end of the lever is connected with the lifting part, and the lifting part is installed on the electrostatic chuck when the electrostatic chuck is disassembled. The force application component is used for applying action force to the force transmitting ends of the levers. The base frame is installed on an electrostatic chuck base when the electrostatic chuck is disassembled. The levers and the base frame are connected rotationally, and the distance from the connection points of the levers and the base frame to the force application end is larger than the distance from the connection points to the force transmitting end. The device is used for disassembling the electrostatic chuck so as to maintain or replace the electrostatic chuck conveniently.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a device for disassembling an electrostatic chuck. Background technique [0002] ICP (Inductively Coupled Plasma, Inductively Coupled Plasma) etching is widely used in the manufacturing process of IC (Integrated Circuit, Integrated Circuit) or MEMS (Micro Electro Mechanical System, Micro Electro Mechanical System) devices. The general process of ICP etching is as follows: the wafer to be etched is placed on the Electro Static Chuck (ESC for short) inside the etching chamber, and the electrostatic chuck is used as the lower electrode to be loaded with the RF power of the lower electrode. , an upper electrode is arranged above the etching chamber, the upper electrode is loaded with upper electrode radio frequency power, and at the same time, etching gas is fed into the etching chamber. Under the action of the upper and lower radio frequency power, an arc discharge is genera...

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Problems solved by technology

[0004] However, due to the existence of the elastic contact element 4, the friction between the electrostatic chuck 1 and the RF feeding copper column 3 will be relatively large, and the adhesion of the O-ring 5 after the electrostatic chuck 1 is used for a long time It will be relatively large, and the electrostatic chuck 1 is disassembled by manually holding the spreader 6 with both hands, and the applied pulling force is uneven and limited. These factors make the disassembly of the electrostatic chuck 1 very laborious and affect the disassembly efficiency.

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