A non-damaging dry overetching preparation method of Schottky junction

Abstract

The invention provides a nondestructive dry-method over-etching manufacturing method of a Schottky junction. The method comprises the following steps of S1, forming a metal barrier layer at a position of an upper surface of an epitaxial wafer, wherein the Schottky junction is manufactured at the position; S2, growing insulation dielectric layers on the upper surface of the epitaxial wafer and an upper surface of the metal barrier layer; S3, using a dry etching method to carry out over etching on an insulating dielectric of the upper surface of the metal barrier layer and forming a Schottky hole; and S4, forming second metal layers on upper surfaces of the insulation dielectric layers and at the Schottky hole, and acquiring the Schottky junction and an anode. In the prior art, during a dry etching process, over etching is performed so that an epitaxial material is damaged, and during a wet etching process, technology precision can not be controlled. By using the method of the invention, the above problems are solved; and under the condition that cost is not increased, the Schottky junction with high quality is made.

Description

Technical field [0001] The present invention relates to the field of semiconductor processing technology, and in particular to a non-damaged dry over-etching preparation method of Schottky junctions. The method can be used to achieve complete non-damage to the epitaxial structure during the entire process of preparing Schottky junctions and is simple and easy. Row. Background technique [0002] Schottky diode is a device similar to PN junction rectification characteristics formed by the contact of metal and lightly doped semiconductor. The Schottky diode is a multi-sub device, so its reverse recovery time is particularly short, and it is especially suitable for higher frequency circuit applications. Schottky diodes are particularly widely used in terahertz circuit applications. However, in order to reduce the junction capacitance of the diode itself and increase its cut-off frequency, the Schottky junction is usually required to be extremely small. For example, the typical appli...

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Problems solved by technology

[0005] In view of the above technical problems, the present invention provides a non-damaging dry overetching preparation method for Schottky junctions, which solves the problem of overetch damage to epitaxial materials in the prior art, and the wet etching process In order to solve the problem that the process precision cannot be controlled, the present invention can produce high-quality Schottky junctions without increasing the cost

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