Application method for accurately obtaining LLR information

An application method and accurate technology, applied in the field of information storage, can solve the problems of low LLR accuracy and affect the LDPC decoding effect, etc., and achieve the effect of realizing data recovery, reducing bit error rate and ensuring efficiency.

Active Publication Date: 2017-07-25
RAMAXEL TECH SHENZHEN
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the decoding is performed according to the LLR provided by the Nand Flash manufacturer, or it is constantly trying to use different LLRs for decoding. There is no effective solution to obtain LLR, and the accuracy of the obtained LLR is not high, which also affects the performance of LDPC. decoding effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Application method for accurately obtaining LLR information
  • Application method for accurately obtaining LLR information
  • Application method for accurately obtaining LLR information

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0014] figure 1 It is the flow chart of the statistics stage and the data recovery stage; it mainly includes two parts, the statistics stage and the data recovery stage. The purpose of the statistics stage is to obtain the voltage and decoding LLR information that is generally applicable to the same batch of NAND FALSH reading.

[0015] In the statistical stage, for the same batch of NAND, because the process and physical conditions a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an application method for accurately obtaining LLR information. The method is characterized by comprising the steps of selecting statistics samples; calculating Optimal Vref of each sample; by setting multi-level multi-bit reading voltages, calculating the LLR information corresponding to the multi-level reading voltages, and performing multi-bit LDPC decoding; and by comparing iterative frequencies and decoding results of the multi-bit LDPC decoding corresponding to different reading voltages, recording the reading voltage with the lowest iterative frequency and the decoding correctness as a multi-bit optimal reading voltage, wherein the corresponding LLR information is initial LLR information of a batch of products, and the batch of the products finitely adopt the optimal reading voltage to read data by default and adopt the initial LLR information to decode the data. An empirical value is obtained by adding statistics and serves as a parameter during normal decoding to ensure normal NAND reading-writing efficiency; and when the normal decoding fails and data recovery needs to be carried out, the scheme can estimate more accurate multi-bit LLR information, thereby reducing the error code rate and realizing the data recovery.

Description

technical field [0001] The invention relates to the field of information storage, in particular to an application method for accurately acquiring LLR information of NAND FLASH. Background technique [0002] The current NAND FLASH controller NFC (Nand Flash Controller) has begun to use a low-density parity-check code LDPC (Low-density Parity-check) code as an error correction code. Compared with BCH codes (abbreviations for Bose, Ray-Chaudhuri and Hocquenghem, BCH codes are multi-level, cyclic, error correction, variable-length digital codes used to correct multiple random error patterns), LDPC codes have more error correction capabilities. Greater advantage, especially multi-bit LDPC. The accuracy of LLR (Log Likelihood Ratios) information obtained from Nand FLASH directly affects the effect of LDPC decoding. At present, the decoding is performed according to the LLR provided by the Nand Flash manufacturer, or it is constantly trying to use different LLRs for decoding. The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/08H03M13/11
CPCG11C16/08H03M13/1125
Inventor 郭超伦建坤
Owner RAMAXEL TECH SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap