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A light-emitting diode chip and manufacturing method thereof
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A technology of light-emitting diodes and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that zinc oxide nanorods cannot effectively improve the light extraction efficiency of LEDs, and achieve improved light extraction efficiency, increased light output, and chemical stability Good results
Active Publication Date: 2019-04-12
HC SEMITEK ZHEJIANG CO LTD
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[0006] In order to solve the problem that the addition of zinc oxide seed layer and zinc oxide nanorods in the prior art cannot effectively improve the light extraction efficiency of LEDs, the embodiment of the present invention provides a light-emitting diode chip and its manufacturing method
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Embodiment 1
[0038] An embodiment of the present invention provides a light emitting diode chip, see figure 1 , the chip includes a substrate 1, and an undoped aluminum nitride buffer layer 2, an undoped gallium nitride layer 3, an N-type gallium nitride layer 4, a multi-quantum well layer 5, P-type electron blocking layer 6 , P-type gallium nitride layer 7 , indium tin oxide (English: Indium Tin Oxide, ITO for short) current spreading layer 8 . The multi-quantum well layer includes multiple indium gallium nitride sublayers and multiple gallium nitride sublayers, and the multiple indium gallium nitride sublayers and gallium nitride sublayers are alternately stacked. The indium tin oxide current spreading layer, the P-type gallium nitride layer, the P-type electron blocking layer and the multi-quantum well layer are provided with grooves extending from the indium tin oxide current spreading layer to the N-type gallium nitride layer. The chip also includes an N-type electrode 9 and a P-type...
Embodiment 2
[0047] An embodiment of the present invention provides a method for manufacturing a chip of a light emitting diode, which is suitable for manufacturing the chip provided in Embodiment 1, see figure 2 , the production method includes:
[0048] Step 200: Provide a substrate.
[0049] Figure 3a It is a schematic diagram of the chip structure after step 200 is executed. Among them, 1 is the substrate.
[0050] Step 201: sequentially growing an undoped aluminum nitride buffer layer, an undoped gallium nitride layer, an n-type gallium nitride layer, a multi-quantum well layer, a p-type electron blocking layer, and a p-type gallium nitride layer on the substrate .
[0051] Specifically, this step 201 may include:
[0052] Using metal organic compound chemical vapor deposition (English: Metal Organic Chemical Vapour Deposition, referred to as: MOCVD) technology to epitaxially grow undoped aluminum nitride buffer layer, undoped gallium nitride layer, and N-type gallium nitride l...
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Abstract
The invention discloses a light emitting diode chip and a manufacturing method thereof and belongs to the technical field of a semiconductor. The chip comprises a substrate, a non-doped aluminum nitride buffer layer, a non-doped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, a P-type electron blocking layer, a P-type gallium nitride layer, an indium tin oxide current extension layer, an N-type electrode, a P-type electrode, multiple titanium dioxide nanometer rods and multiple silver nanometer particles, wherein the indium tin oxide current extension layer, the P-type gallium nitride layer, the P-type electron blocking layer and the multi-quantum well layer are provided with a groove extending from the indium tin oxide current extension layer to the N-type gallium nitride layer, the N-type electrode is arranged on the N-type gallium nitride layer in the groove, the P-type electrode is arranged on the indium tin oxide current extension layer, the multiple titanium dioxide nanometer rods are distributed on the indium tin oxide current extension layer in an array mode, and an outer wall of each titanium dioxide nanometer rod is provided with the multiple silver nanometer particles. The chip is advantaged in that LED light emitting efficiency can be obviously improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chip of a light emitting diode and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the luminous efficiency of light-emitting diodes (English: Light Emitting Diode, referred to as: LED) has been continuously improved, and it is widely used in various color display screens, decorative lights, indicator lights, and white lighting lamps. However, the luminous efficiency of LEDs The desired goal has not been reached. [0003] The luminous efficiency of LED is determined by two aspects: internal quantum efficiency and light extraction efficiency. The internal quantum efficiency of existing gallium nitride-based LEDs is already very high. extraction efficiency. At present, a zinc oxide seed layer is made on the current spreading layer of the LED by precipitation method, and then a zinc oxide nanorod array is grow...
Claims
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