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Electrostatic chuck device

An electrostatic chuck and electrode technology, which is applied in the direction of holding devices, circuits, and electrical components that apply electrostatic attraction, can solve problems such as temperature distribution on the wafer surface, and achieve the effect of improving uniformity

Active Publication Date: 2019-02-05
SUMITOMO OSAKA CEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, even if it is used as an apparatus for performing various film formation on a wafer, it will be affected by the film formation conditions and the atmosphere control in the film formation chamber, resulting in a temperature distribution within the wafer surface.

Method used

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Examples

Experimental program
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Effect test

no. 1 Embodiment approach ”

[0131] figure 1 It is a sectional view showing the electrostatic chuck device according to the first embodiment of the present invention. The electrostatic chuck device 1 of this form has: a disk-shaped electrostatic chuck part 2, one main surface (upper surface) side is used as a mounting surface; a disk-shaped temperature-adjusting base part 3 is provided on the electrostatic chuck. The bottom of the disk part 2, and has the thickness that adjusts the electrostatic chuck part 2 to a desired temperature; the electrode 4 for high-frequency generation is sandwiched between the electrostatic chuck part 2 and the base part 3 for temperature adjustment; A high-frequency power supply (not shown in the figure) is connected to the high-frequency generating electrode; the first heating element 5 is arranged between the high-frequency generating electrode 4 and the temperature adjustment base part 3 in layers, and includes a plurality of main heating elements. device; and the protecti...

no. 2 Embodiment approach ”

[0197] Figure 4 It is a sectional view showing the electrostatic chuck device according to the second embodiment of the present invention. The electrostatic chuck device 101 of this form is different in that a second heating element is provided between the first heating element 5 and the temperature adjustment base portion 3 . In addition, the insulating plates 7 and 8, the wiring layer 9 interposed between the insulating plates 7 and 8, and the adhesive for bonding the insulating plate 7 to the base part 3 for temperature adjustment are disposed along with the second heating element. Connect layer 7A.

[0198] exist Figure 5 Among them, the second heating element 6 is arranged in layers between the first heating element 5 and the base portion 3 for temperature adjustment. On the other hand, it may be arranged between the first heating element 5 and the protective electrode 70 . In either case, the guard electrode 70 blocks the high frequency generated by the high freque...

no. 3 Embodiment approach ”

[0226] Figure 7 It is a cross-sectional view showing an electrostatic chuck device according to a third embodiment of the present invention. The electrostatic chuck device 501 of this form is provided with: a disk-shaped electrostatic chuck part 502 with one main surface (upper surface) side as a mounting surface; a disk-shaped temperature-adjusting base part 503 provided on the electrostatic chuck The bottom of the disk part 502, and has a thickness to adjust the electrostatic chuck part 502 to a desired temperature; the layered structure of the high-frequency generation electrode 550 is sandwiched between the electrostatic chuck part 502 and the temperature adjustment base part 503 Between; the first heating element 505 of layered structure is sandwiched between the electrostatic chuck part 502 and the electrode 550 for generating high frequency; the second heating element 506 of layered structure is sandwiched between the electrode 550 for generating high frequency betwee...

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Abstract

The present invention provides an electrostatic chuck device. In the present invention, the electrostatic chuck device includes a plurality of divided heaters, and can uniformly control the temperature of a region heated by each heater with a simple structure. In the electrostatic chuck device of the present invention, it is provided with: an electrostatic chuck part having a mounting surface on which a plate-shaped sample is placed on one main surface, and an electrode for electrostatic adsorption; The electrostatic chuck part is arranged on the side opposite to the loading surface to cool the electrostatic chuck part; the high-frequency generating electrodes are arranged in layers between the electrostatic chuck part and the temperature adjustment between the base parts; a high-frequency power supply connected to the high-frequency generating electrode; a first heating element arranged in layers between the high-frequency generating electrode and the temperature-adjusting base part a plurality of main heaters; and a protective electrode arranged in layers between the high-frequency generating electrode and the first heating element.

Description

technical field [0001] The invention relates to an electrostatic chuck device provided with a heating element, and relates to an electrostatic chuck device, an electrostatic chuck control device, a program and an electrostatic chuck control method. [0002] This application is based on Japanese Patent Application No. 2014-235737 filed in Japan on November 20, 2014, Japanese Patent Application No. 2014-235454 filed in Japan on November 20, 2014, and Japanese Patent Application No. 2014-235454 filed in Japan on March 18, 2015. Patent application No. 2015-054573 and Japanese patent application No. 2015-054985 filed in Japan on March 18, 2015 claim priority, and the contents thereof are cited here. Background technique [0003] In semiconductor manufacturing equipment using plasma, such as plasma etching equipment and plasma CVD equipment, electrostatic chuck equipment has conventionally been used as a method for simply mounting and fixing a wafer on a sample table and maintaini...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H02N13/00
CPCH01L21/67103H01L21/67109H01L21/67248H01L21/6833H01L21/67098H02N13/00H01L21/67069
Inventor 小坂井守三浦幸夫
Owner SUMITOMO OSAKA CEMENT CO LTD
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