Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for preparing ITO sputtering target for TFT-LCD through controlling oxygen content

A sputtering target and oxygen content technology, which is applied in the field of preparation of ceramic targets for sputtering, can solve problems such as high sintering temperature at high temperature, harmful phases produced by targets, and unfavorable target resistivity, etc. The effect of small load and avoiding the loss of oxygen in the billet

Active Publication Date: 2017-08-04
725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the high-temperature sintering temperature of this method is high, which will form abnormally long grains and produce harmful phases in the target, both of which are not conducive to the resistivity of the target.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing ITO sputtering target for TFT-LCD through controlling oxygen content
  • Method for preparing ITO sputtering target for TFT-LCD through controlling oxygen content

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Weigh a certain amount of ITO vaporized alloy powder with a tin dioxide content of 8.5%, a purity of ≧99.99%, and an average particle size of 50nm. Weigh a certain amount of deionized water, add surfactants, binders and other auxiliary agents, then add the ITO gasification alloy powder and carry out ball milling to prepare an ITO slurry with a solid content of 50%, and then mix the slurry Carry out granulation, and the granulated powder is in the shape of a solid sphere. The prepared granulated powder was put into a mold with a size of 435mm×900mm, and molded under the condition of 60MPa, and the holding time was 300s. Put the formed blank into a flexible sheath for vacuum sealing, put it into a cold isostatic press, and carry out isostatic pressing under the condition of 200MPa, with a holding time of 300s. Put the green body after isostatic pressing into the sintering furnace for micro-pressure sintering. The specific sintering process is as follows: heat up to 120°...

Embodiment 2

[0028] Weigh a certain amount of ITO vaporized alloy powder with a tin dioxide content of 9.5%, a purity of ≧99.99%, and an average particle size of 50nm. Weigh a certain amount of deionized water, add surfactants, binders and other auxiliary agents, then add the ITO gasification alloy powder and carry out ball milling to prepare an ITO slurry with a solid content of 55%, and then the slurry Carry out granulation, and the granulated powder is in the shape of a solid sphere. The prepared granulated powder was put into a mold with a size of 520mm×1100mm, and molded under the condition of 80MPa, and the holding time was 420s. Put the formed blank into a flexible sheath for vacuum sealing, put it into a cold isostatic press, and carry out isostatic pressing under the condition of 250MPa, with a holding time of 420s. Put the green body after isostatic pressing into the sintering furnace for micro-pressure sintering. The specific sintering process is as follows: heat up to 150°C a...

Embodiment 3

[0030] Weigh a certain amount of ITO vaporized alloy powder with a tin dioxide content of 10.5%, a purity of ≧99.99%, and an average particle size of 50nm. Weigh a certain amount of deionized water, add surfactants, binders and other auxiliary agents, then add the ITO gasification alloy powder and carry out ball milling to prepare an ITO slurry with a solid content of 60%, and then the slurry Carry out granulation, and the granulated powder is in the shape of a solid sphere. The prepared granulated powder was put into a mold with a size of 625mm×1300mm, and molded under the condition of 100MPa, and the holding time was 600s. Put the formed blank into a flexible sheath for vacuum sealing, put it into a cold isostatic press, and carry out isostatic pressing under the condition of 300MPa, with a holding time of 600s. Put the green body after isostatic pressing into the sintering furnace for micro-pressure sintering. The specific sintering process is as follows: heat up to 180°C...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing an ITO sputtering target for a TFT-LCD through controlling the oxygen content. The method comprises the steps of: with ITO gasified alloy powder as a raw material, adding an assistant and water, ball-milling, carrying out granulation and pressing into a green body, putting the green body into a sintering furnace; firstly vacuumizing the inside of the sintering furnace, gradually controlling a temperature rise; after the temperature rises to a debinding temperature, immediately introducing oxygen into the furnace, carrying out heat-preservation debinding under the oxygen pressure condition of 0.03-0.05MPa; and gradually increasing the oxygen pressure to 0.08-0.1MPa, gradually increasing the temperature to a sintering temperature, carrying out heat-preservation sintering, cooling, stopping introducing oxygen to obtain the ITO sputtering target. Debinding and sintering of the green body are integrated and the oxygen is introduced at the debinding state, so that the debinding process is accelerated and an oxygen loss of the green body at the debinding temperature is avoided. The oxygen introducing pressure is gradually increased step by step after vacuumizing, the requirement of inhibiting the oxygen loss of the green body by using the oxygen at the temperatures of different stages is met at the minimum oxygen input quantity, the oxygen introducing pressure is low and the equipment load is lower.

Description

technical field [0001] The invention relates to a method for preparing a sputtering ceramic target, in particular to a method for preparing an ITO sputtering target for TFT-LCD by controlling the oxygen content. Background technique [0002] ITO film has high light transmittance, excellent electrical conductivity and easy processing, and is widely used in the field of optoelectronics. It is an indispensable transparent electrode material for the flat panel display (FPD) industry, used to make liquid crystal displays (LCD), thin films Transistor liquid crystal display (TFT-LCD), organic light emitting display (OLED), plasma display (PDP), touch screen (TP), etc. With the development of large-scale flat panel displays, especially TFT-LCDs, there are increasingly higher requirements for the size and performance of ITO targets. At present, this technology is almost monopolized by foreign countries, producing large-size, ITO targets with high density and low resistivity have bec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/457C04B35/64
CPCC04B35/457C04B35/64C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567C04B2235/6583C04B2235/66C04B2235/77
Inventor 谢斌方宏刘冠鹏
Owner 725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com