Monitoring system and method for consuming condition of target material in sputtering film forming device

Abstract

The invention relates to a monitoring system and method for the consuming condition of a target material in a sputtering film forming device. The monitoring system comprises the target material arranged in the sputtering film forming device, wherein the two ends of the target material are connected with weight measurement instruments, and the weight measurement instruments are connected with a central control system. The monitoring method comprises the following steps: measuring the real-time weight of the target material by the weight measurement instruments, transmitting the real-time weight of the target material to the central control system, automatically generating the real-time weight variation curve of the target material by the central control system, monitoring the weight of the target material, and controlling the sputtering film forming device to stop discharging electricity by the central control system when the weight of the target material reaches preset consumable weight. The target material can be utilized to an utmost extent, the breakdown problem of the target material is prevented, the use efficiency of the target material is increased, and the quality of finished products manufactured by the sputtering film forming device is improved.

Description

technical field [0001] The invention relates to the technical field of mobile display manufacturing, in particular to a target material consumption monitoring system and monitoring method used in a sputtering film forming device. Background technique [0002] In the TFT substrate production process, it is necessary to deposit Al, Mo, Ti, Cu and other metal films and ITO, IGZO and other non-metal films on the glass substrate. This process is usually completed by physical vapor deposition (PVD); the working principle of PVD is to use The Ar ions in the plasma bombard the target, sputter out the target atoms, and transfer to the surface of the glass substrate to complete the deposition of the film layer; With the prolongation of the use time, it is constantly being consumed. At present, the target material on the machine is consumed and cannot be found in time. It is easy to cause the target material to be broken down, which will affect the backplane and the product. In order t...

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Problems solved by technology

[0002] In the TFT substrate production process, it is necessary to deposit Al, Mo, Ti, Cu and other metal films and ITO, IGZO and other non-metal films on the glass substrate. This process is usually completed by physical vapor deposition (PVD); the working principle of PVD is to use The Ar ions in the plasma bombard the target, sputter out the target atoms, and transfer to the surface of the glass substrate to complete the deposition of the film layer; With the prolongation of the use time, it is constantly being consumed. At present, the target material on the machine is consumed and cannot be found in time. It is easy to cause the target material to be broken down, which will affect the backplane and the product. In order to prevent this from happening, it is necessary to grasp the target material in time. consumption

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