Flexible resistive random access memory having sol-gel thin film and preparation method thereof

Abstract

The invention discloses a flexible resistive random access memory having a sol-gel thin film and a preparation method thereof. The resistive random access memory comprises a bottom electrode, a memory medium layer and a top electrode, wherein the memory medium layer is arranged on an upper surface of the bottom electrode; the top electrode is arranged on an upper surface of the memory medium layer; the bottom electrode is composed of a transparent conductive oxide thin film; the memory medium layer is a metal oxide sol-gel thin film treated by deep ultraviolet light; and the top electrode is a metal aluminum layer; the preparation method of the flexible resistive random access memory having the sol-gel thin film is as follows: 1, preparing the bottom electrode; 2, preparing an AlO<x> sol-gel thin film on the bottom electrode; 3, under a room temperature condition, treating the AlO<x> sol-gel thin film with the deep ultraviolet light to obtain the memory medium layer; and 4, preparing the top electrode. By employing the flexible resistive random access memory prepared in the invention, a resistance switch has good performance, and after being bent continuously, the device still can keep characteristics of the resistance switch.

Description

technical field [0001] The invention belongs to the technical field of new materials and microelectronics, and in particular relates to a sol-gel film flexible resistive variable memory and a preparation method thereof. Background technique [0002] As the technological nodes of the integrated circuit manufacturing process continue to advance, the technical and physical limitations faced by traditional memories will be difficult to solve, and it is particularly urgent to study new memories. RRAM has attracted attention due to its simple structure, fast read and write speed, non-destructive read process, better state retention characteristics, lower operating voltage and high integration. Due to the characteristics of light weight, foldability and low manufacturing cost of the flexible substrate, the flexible resistive memory has important applications in the Internet of Things and portable electronic products. [0003] So far, the resistive layer materials of flexible resis...

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Problems solved by technology

However, one of the characteristics of these methods is that the preparation of the resistive layer is usually deposited under high vacuum, which requires high requirements for deposition equipment, and the material of the resistive layer is not firmly bonded to the plastic substrate.

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