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Thin-film transistor and method for manufacturing the same, array substrate, and display device

A thin-film transistor and electrode main body technology, applied in the fields of array substrates, display devices, thin-film transistors and their manufacturing methods, can solve problems affecting the normal operation of thin-film transistors, shifting of volt-ampere characteristic curves, etc., and achieve reduction of volt-ampere characteristic curves The degree of offset, the effect of reducing the amount of light and reducing the degree of influence

Active Publication Date: 2017-09-01
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem that the volt-ampere characteristic curve of the active layer pattern will shift and affect the normal operation of the thin film transistor, the application provides a thin film transistor and its manufacturing method, an array substrate, and a display device

Method used

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  • Thin-film transistor and method for manufacturing the same, array substrate, and display device
  • Thin-film transistor and method for manufacturing the same, array substrate, and display device
  • Thin-film transistor and method for manufacturing the same, array substrate, and display device

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Embodiment Construction

[0081] In order to make the purpose, technical solution and advantages of the present application clearer, the implementation manners of the present application will be further described in detail below in conjunction with the accompanying drawings.

[0082] figure 1 A schematic structural diagram of a thin film transistor provided in an embodiment of the present invention, such as figure 1 As shown, the thin film transistor may include: a gate pattern 01 , a gate insulating layer 02 , an active layer pattern 03 , a source pattern 04 and a drain pattern 05 stacked in sequence.

[0083] Among the surface facing the gate insulating layer 02 in the source pattern 04, the surface facing the gate insulating layer 02 in the drain pattern 05, and the surface facing the gate insulating layer 02 in the gate pattern 01, there is at least one target surface X, and the target surface X The light incident on the target surface can be diffusely reflected to prevent part of the light from e...

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Abstract

The application, which belongs to the technical field of displaying, discloses a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin-film transistor comprises a gate pattern, a gate insulating layer, an active layer pattern, a source pattern, and a drain pattern that are laminated successively. At least one of the surface, facing the gate insulating layer, of the source pattern, the surface, facing the gate insulating layer, of the drain pattern, and the surface, facing the gate insulating layer, of the gate pattern is a target surface that is capable of carrying out diffuse reflection on light entering the target surface to prevent entrance of the part of light into the active layer pattern. Therefore, a problem that normal working of a thin-film transistor is affected because of the offset of the volt-ampere-characteristic curve of the active layer pattern can be solved; and thus the influence on normal working of the thin-film transistor by the target light can be weakened. The thin-film transistor is applied to the display device.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] The array substrate in the display device includes: a base substrate and a plurality of pixel units arranged in an array arranged on one side of the base substrate, each pixel unit may include a thin film transistor, a pixel electrode, a common electrode and a liquid crystal. [0003] In related technologies, different voltages are usually input to pixel electrodes through thin film transistors, thereby changing the degree of deflection of liquid crystals, adjusting the light transmittance of pixel units, and then realizing the function of the display device to display images. Exemplarily, the thin film transistor may include: a gate pattern, a gate insulating layer, an active layer pattern, and a source-drain pattern stacked on the base su...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/66969H01L29/78633H01L29/7869H01L21/465H01L21/02565H01L21/467H01L27/1225H01L27/127H01L27/1288
Inventor 操彬彬王超孙林
Owner BOE TECH GRP CO LTD
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