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Method and system for simulating surface topography of high-k metal grate

A technology of surface topography and metal grid, which is applied in the field of high-k metal grid surface topography simulation, can solve problems such as precision problems, and achieve the effect of accurate surface topography

Active Publication Date: 2017-09-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention discloses a method and system for simulating the surface topography of a high-k metal grid to solve the accuracy problem of the surface topography simulation of a high-k metal grid in the prior art

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  • Method and system for simulating surface topography of high-k metal grate
  • Method and system for simulating surface topography of high-k metal grate
  • Method and system for simulating surface topography of high-k metal grate

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Embodiment Construction

[0046] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0047] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, and it should not be limited here. The protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth should be inc...

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Abstract

The invention discloses a method and a system for simulating the surface topography of a high-k metal grate. The method includes the following steps that according to the technological preparation process, the high-k metal grate CMP technological process is divided into multiple sub processes in sequence to obtain a sub-process sequence; according to technologies in all the sub processes, technology models corresponding to the sub processes are constructed; by using the technology models of the sub processes in the sub-process sequence in sequence, the sub processes are simulated, and the simulated surface topography is obtained. The method can consider the influence of the technologies in the technological process and initial surface topography on the final grinding surface topography and thus can conduct accurate simulation on the surface topography of the high-k metal grate.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method and system for simulating the surface topography of a high-k metal gate. Background technique [0002] With the continuous reduction of integrated circuit process nodes, the requirements for the fineness of semiconductor manufacturing processes are getting higher and higher, which makes semiconductor processes face more process difficulties and design restrictions. For example, in the chip manufacturing process, the surface flatness of the formed aluminum metal grid is extremely difficult to meet the standard, and when the chemical mechanical planarization (CMP) process is not completely polished, the redundant aluminum metal grid will not be completely removed, thereby Causes circuit shorts; excessive grinding can lead to thinner gate electrodes, resulting in excessive gate resistance and potential contact over-etching. Therefore, it is very important to simu...

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/367G06F30/392
Inventor 徐勤志陈岚刘宏伟方晶晶
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI