Power semiconductor module with housing
A technology for power semiconductors and casings, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as damage, high stray inductance, and damage to the first metal foil layer
Active Publication Date: 2021-02-05
SEMIKRON ELECTRONICS GMBH & CO KG
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Problems solved by technology
[0004] The power semiconductor module known from DE 10 2012 218 868 B3 has the disadvantage that the first load current connection element and the electrical connection between the first load current connection element and the connection element arrangement have a relatively high stray inductance
Furthermore, when the load current connection element is connected to the connection element arrangement, high forces may be exerted on the second load current connection element, i.e. the first metal foil layer, which may lead to damage or destruction of the first metal foil layer
Furthermore, due to the different coefficients of thermal expansion of the load current connection elements and the connection element arrangement, there may be faults in the conductive contact of the load current connection element with the connection element arrangement in the event of mechanical shock loads and vibration loads of the individual elements
Method used
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[0026] figure 1 A sectional view of a power semiconductor arrangement 28 with a power semiconductor module 1 according to the invention and with an electrical connection element arrangement 17 designed as a printed circuit board 17 is shown. figure 2 A sectional view of a power semiconductor arrangement 28 with a power semiconductor module 1 according to the invention and with an electrical connection element arrangement 17 ′ designed as a current busbar arrangement 17 ′ is shown. image 3 A sectional view of a power semiconductor arrangement with a power semiconductor module 1 according to the invention is shown with a several-part elastic deformation element 30 and with an electrical connection element arrangement 17 designed as a printed circuit board 17 . like Figure 1 to Figure 3 As shown in , apart from the different configuration of the elastically deformable element 30 , the semiconductor modules 1 according to the invention correspond to each other, including advan...
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The invention relates to a power semiconductor module with a housing (2) having an elastically deformable element (30) made of elastomer and having power semiconductor components (T1, T2) arranged in the housing (2), The power semiconductor components (T1, T2) are electrically conductively connected to a foil composite (5), wherein the foil composite (5) comprises a conductive structured or unstructured first foil (6) and a conductive A structured or unstructured second foil (7) and a third non-conductive foil (8) arranged between the first and second foils (6, 7), wherein the housing (2) has an opening ( 33 ), a portion of the foil composite ( 5 ) is guided through the opening ( 33 ), wherein the power semiconductor module ( 1 ) is in electrically conductive contact with the electrical connection element arrangement ( 17 , 17 ′).
Description
technical field [0001] The invention relates to a power semiconductor module with a housing. Background technique [0002] From FIG. 6 of DE 10 2012 218 868 B3 and the accompanying description, a power semiconductor module is known comprising a power semiconductor component, a base material, a foil composite and a first and a second load current connection element (for the power semiconductor The module is in conductive contact with the electrical connection element device), wherein the foil composite comprises a first metal foil layer and a structured second metal foil layer and an electrically insulating foil arranged between the first and second metal foil layers layer, wherein the power semiconductor component is electrically conductively connected to the foil composite material and the substrate, wherein the second load current connection element forms a single piece with the first metal foil layer, wherein the electrically insulating A part of the foil layer is arrang...
Claims
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IPC IPC(8): H01L23/48H01L23/36H01L25/18H01L23/06H01L25/07
CPCH01L23/06H01L23/36H01L23/48H01L25/07H01L25/18H01L2224/18H01L23/053H01L23/3735H01L23/5387H01L2224/24137H01L25/072H01L24/50
Inventor J·阿蒙H·科博拉
Owner SEMIKRON ELECTRONICS GMBH & CO KG