Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of array substrate and its preparation method, display device

A technology of array substrate and substrate substrate, which is applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of TFT component performance failure, increased impact, black spots, etc.

Active Publication Date: 2019-08-13
BOE TECH GRP CO LTD +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The array substrate, that is, the TFT substrate formed with thin film transistors (Thin Film Transistor) is one of the important components in display products. During the preparation process of the array substrate, due to the thin thickness of the substrate substrate (usually glass, Glass Substrate) , and there are many processes on the glass substrate. During the process, the glass substrate will contact the equipment multiple times, which greatly increases the impact of the static electricity accumulated on the equipment machine on the TFT components on the glass substrate. Some of the static electricity It is caused when the back of the glass substrate is in contact with the equipment machine, such as the contact between the glass substrate and the roller (Roller) for transportation or the support pin (Pin) for support, the glass substrate and the roller or The contact of the support pins will generate ESD (Electro-Static discharge, electrostatic discharge) through induction, and the released charge will be transmitted to the array substrate, which will cause the performance failure of the TFT element, resulting in defects such as bright spots, multiple bright spots, and black spots in the display product.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of array substrate and its preparation method, display device
  • A kind of array substrate and its preparation method, display device
  • A kind of array substrate and its preparation method, display device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0056] Further, for the case where the above-mentioned electrostatic shielding layer is specifically composed of ion-doped polysilicon with a certain debugging resistance, after the step of forming the above-mentioned electrostatic shielding layer, the above-mentioned preparation method provided by the embodiment of the present invention further includes the following steps,

[0057] The electrostatic shielding layer is heated and activated to improve the orderly arrangement of doped ions in the electrostatic shielding layer.

[0058] That is, by heating the electrostatic shielding layer, the thermal movement of the dopant ions after heating is used to improve the uniformity of their diffusion in the polysilicon body, so that the orderly arrangement of the dopant ions is improved, and the shielding effect of the electrostatic shielding layer is further enhanced.

[0059] Here, the step of heating and activating the electrostatic shielding layer may specifically be after the ste...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an array substrate, a preparation method thereof, and a display device, which relate to the field of display technology, and can shield the signals accumulated in the device from being in contact with the backside of the substrate of the array substrate and transmitted to the array substrate through the ESD generated by induction. line and / or TFT components, improving product yield. The preparation method includes the steps of forming gate lines, data lines and thin film transistors above the base substrate; and prior to the aforementioned steps, sequentially forming an electrostatic shielding layer and an isolation layer covering the electrostatic shielding layer on the base substrate step; wherein, the orthographic projection of the pattern of the electrostatic shielding layer on the substrate covers the pattern of at least one of the gate line, the data line and the thin film transistor to be formed on the substrate Orthographic projection on a substrate. It is used for the preparation of an array substrate and a display device including the array substrate.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display device. Background technique [0002] The array substrate, that is, the TFT substrate formed with thin film transistors (Thin Film Transistor) is one of the important components in display products. During the preparation process of the array substrate, due to the thin thickness of the substrate substrate (usually glass, , there are many processes on the glass substrate. During the process, the glass substrate will contact the equipment multiple times, which greatly increases the impact of the static electricity accumulated on the equipment machine on the TFT components on the glass substrate. Some of the static electricity It is caused when the back of the glass substrate is in contact with the equipment machine, such as the contact between the glass substrate and the roller (Roller) for transportation or t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12
CPCH01L27/124H01L27/127H01L27/1296H01L23/60H01L27/1218H01L27/1288
Inventor 王培金贤镇张凯史大为王文涛
Owner BOE TECH GRP CO LTD