Poly-silicon filling method suitable for wide-size groove
A filling method and polysilicon technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor filling effect, poor surface morphology of fillers, and difficult processes, and achieve poor filling effect, surface well-formed effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0028] The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0029] In order to solve the problem that the ion implantation energy is difficult to monitor in the semiconductor chip manufacturing process in the prior art, the present invention provides a polysilicon filling method suitable for wide-sized trenches, which is mainly achieved by sequentially forming multiple layers of mutually insulating layers on a silicon substrate. The polysilicon layer is subjected to ion implantation, and the ion implantation energy is detected through the resistance test to realize simple, convenient a...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com