Infrared image sensor reading circuit

A technology for reading out circuits and infrared images, applied to instruments, adjusting electrical variables, control/regulation systems, etc., can solve the problems of large output noise and affecting the quality of infrared images, so as to improve image quality, eliminate noise effects, and reduce output The effect of signal noise

Active Publication Date: 2017-10-17
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These readout circuit architectures generally have the problem of large output noise, which

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Infrared image sensor reading circuit
  • Infrared image sensor reading circuit
  • Infrared image sensor reading circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Attached below figure 1 , the specific embodiment of the present invention will be further described in detail. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0023] see figure 1 , figure 1 Shown is a schematic circuit diagram of a preferred embodiment of the infrared image sensor readout circuit of the present invention. As shown in the figure, in the embodiment of the present invention, the infrared image sensor readout circuit includes a dark current generation module (as shown in the dotted line box 1), a photo-generated current generation module (as shown in the dotted line box 2), a reset current generation module module (as shown in the dotted line box 3) and an integrator module (as shown in the dotted line box 4); in addition, it also includes a timing control module (not shown), which is used t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An infrared image sensor reading circuit comprises a dark current generation module, a photo-generated current generation module, a reset current generation module, a sequential control module and an integrator module for photo-generated current-output voltage conversion, wherein one end that the photo-generated current generation module is in a parallel connection with the reset current generation module is connected with the other end of the dark current generation module at a node N1 and the other end is connected with a power supply negative pole VSS; an input end of the integrator module is connected to the parallel-connection point N1 of the photo-generated current generation module and the reset current generation module; an output end of the integrator module is an output end of the infrared image sensor reading circuit; when the infrared image sensor reading circuit starts to work, the sequential control module controls alternation work of the photo-generated current generation module and the reset current generation module; and voltage of the photo-generation currents and the reset currents respectively are integrated and subtracted, and a final output signal of the integrator module can be achieved. Therefore, output signal noise can be effectively reduced and image quality can be improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to the field of CMOS analog integrated circuit design, and in particular to an infrared image sensor readout circuit. Background technique [0002] At present, infrared image sensors are widely used in many fields such as military field, industrial production, traffic monitoring, automobile industry, and disaster prevention and relief. Infrared image sensors can be simply divided into cooled and uncooled. Cooled infrared image sensors are expensive and have excellent performance, and are generally used in the military field. In contrast, the uncooled type is cheap and widely used in civilian infrared detection products. [0003] The infrared image sensor uses an infrared photosensitive array to receive infrared rays, converts changes in the intensity of infrared rays into voltage changes, and then converts them into digital signals through an analog-to-digital converter...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G05F3/26
CPCG05F3/26
Inventor 段杰斌温建新张小亮严慧婕蒋宇曾夕
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products