Polishing method

A polishing liquid and polishing surface technology, applied in the polishing field, can solve the problems of large consumption of consumables, low production efficiency, long polishing time, etc., and achieve the effects of reducing the use of consumables, improving production efficiency, and reducing costs

Inactive Publication Date: 2017-11-03
HWATSING TECH +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In related technologies, high hardness materials such as CVD diamond are polished with a diamond grinding wheel. Due to the high hardness of the material, the consumption of consumables is large, and the polishing time is long and the production efficiency is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] According to one embodiment of the present invention, the upper polishing head clamps a 2inc wafer (wafer diameter is 2 inches), rotates at a speed of 50rpm, and the lower polishing head clamps a slice of 2inc wafer, rotates with a speed of 120rpm, while the upper The polishing head reciprocates relative to the lower polishing head at 15 times / min, and the swing range of the upper polishing head is 100 mm. The abrasive of the polishing liquid used for polishing is diamond, and the proportion of the abrasive in the polishing liquid is 5%.

Embodiment 2

[0045] According to one embodiment of the present invention, the upper polishing head holds a slice of 2inc wafer and rotates at a speed of 100rpm, and the lower polishing head holds a slice of 2inc wafer and rotates at a speed of 50rpm. The upper polishing swing range is 100mm and moves back and forth relative to the lower polishing head. The abrasive of the polishing liquid used for polishing is diamond, and the proportion of the abrasive in the polishing liquid is 8%.

Embodiment 3

[0047] According to one embodiment of the present invention, the upper polishing head holds a slice of 4inc wafer and rotates at a speed of 50rpm, and the lower polishing head holds a slice of 4inc wafer and rotates at a speed of 120rpm. The upper polishing swing range is 200mm and moves back and forth relative to the lower polishing head. The abrasive of the polishing liquid used for polishing is silicon carbide, and the proportion of the abrasive in the polishing liquid is 15%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a polishing method. The polishing method comprises the following steps: placing the polishing surfaces of two pieces of objects to be polished oppositely, placing a polishing solution between the two polishing surfaces, and enabling the two objects to be polished to perform relative motion for polishing. According to the polishing method provided by the invention, the two objects to be polished are enabled to perform relative motion, so that the polishing process can be carried out smoothly; besides, the two planes of the two objects to be polished can also be polished simultaneously, the production efficiency is improved, the material consumption is reduced, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of precision machining, in particular to a polishing method. Background technique [0002] In related technologies, high-hardness materials such as CVD diamond are polished with a diamond grinding wheel. Due to the high hardness of the material, the consumption of consumables is large, and the polishing time is long, resulting in low production efficiency. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, the present invention proposes a polishing method, the polishing efficiency of the polishing method is improved, and the cost is reduced. [0004] According to the polishing method of an embodiment of the present invention, the polishing method includes: placing the surfaces to be polished of two objects to be polished facing each other and putting a polishing liquid between the two surfaces to be poli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00
CPCB24B1/00
Inventor 赵慧佳路新春沈攀
Owner HWATSING TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products