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A n-well resistor and its production method

A technology of well resistance and well region, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of inaccurate control and affect the accuracy of N-well resistance value, and achieve the effect of precise control

Active Publication Date: 2019-10-01
NANJING ZGMICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present application proposes an N-well resistance and its generation method to overcome the inaccurate control of the existing heat treatment process that affects the accuracy of the N-well resistance value.

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  • A n-well resistor and its production method
  • A n-well resistor and its production method
  • A n-well resistor and its production method

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Embodiment Construction

[0025] In order to make the technical solutions and advantages of the present application clearer, the exemplary embodiments of the present application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all implementations. Exhaustive list of examples. And in the case of no conflict, the embodiments in this specification and the features in the embodiments can be combined with each other.

[0026] In the process of implementing the present application, the inventors found that in the integrated circuit process of the N-well resistor, the N-well region and the N+ region will change due to the heat treatment process in the subsequent process, so the defined length accuracy has a large deviation. The doping impurities in the N well region and the N+ region will diffuse during the heat treatment in the subsequent process, and the temperature c...

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Abstract

The invention provides an N trap resistor and a generating method thereof. The N trap resistor comprises a first polycrystalline silicon part; a first N+ area disposed on the lower part of the first polycrystalline silicon part; a second polycrystalline silicon part, which is separated from the first polycrystalline silicon part; a second N+ area disposed on the lower part of the second polycrystalline silicon part; an N trap area. The first N+ area is disposed in one end of the N trap area, and is connected with the N trap area. The second N+ area is disposed in the other end of the N trap area, and is connected with the N trap area. The polycrystalline silicon parts are provided with hollow structures having hollow inner parts, and impurities injected in the hollow structures are used to form the corresponding N+ areas. By adopting the N trap resistor, the precision of the N trap resistance value during thermal processing process is improved. By adopting the generating method of the N trap resistor, the N trap resistor having the high precision resistance value is maintained in the thermal processing process.

Description

technical field [0001] The present application relates to the technical field of circuit design, in particular to an N-well resistor and a method for generating the same. Background technique [0002] N-well resistors are often used in analog circuit design. figure 1 Schematic diagram for the structure of existing N-well resistors, such as figure 1 As shown, the N well resistor in the prior art includes an N well region and an N+ region, wherein the region formed by the dotted line frame is the N well region, and the thick solid line frame is the N+ region, and N+ The N well region is generally lightly doped (low doping concentration), and N+ is heavily doped (high doping concentration). Generally, the length of the N well resistor is determined by the distance between the center points of the two N+ regions. In the integrated circuit process, the N-well area and the N+ area will change due to the heat treatment process in the subsequent process, so the defined length pre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L23/64
Inventor 王钊
Owner NANJING ZGMICRO CO LTD