Unlock instant, AI-driven research and patent intelligence for your innovation.

Pre-driver short circuit protection

A gate driver, driving current technology, used in circuits, motor control, semiconductor devices, etc.

Active Publication Date: 2021-04-13
TEXAS INSTR INC
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The problems identified above are largely addressed by systems and methods for protecting gate driver circuits from short circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pre-driver short circuit protection
  • Pre-driver short circuit protection
  • Pre-driver short circuit protection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The following discussion refers to various embodiments of the invention. While one or more of these embodiments may be preferred, the disclosed embodiments should not be interpreted or otherwise used to limit the scope of the disclosure, including the claims. Furthermore, those skilled in the art will appreciate that the following description has broad application and that discussion of any embodiment is meant to be an example of that embodiment only, and is not intended to imply that the scope of the present disclosure, including the claims, is limited to that embodiment .

[0013] In many systems, power field effect transistors (FETs) are used to drive high currents to control motors. Gate drivers typically control the operation of these power FETs. The gate driver can drive the power FET by generating a signal at a drive current (ie, pull-up current) to turn on the power FET. Similarly, the gate driver can pull down current (to pull current) to turn off the power ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application discloses a gate driver circuit 108 including a comparator 204 and a gate driver 222 . The comparator 204 is configured to detect a short circuit in a first power field effect transistor (FET) 208 . The gate driver 222 is configured to drive the gate of the first power FET 208 by generating a first signal at a first drive current. In response to comparator 204 detecting a short circuit in first power FET 208 , gate driver 222 is also configured to pulse the first signal at the first pull-down current. After the pulse ends, the gate driver 222 is also configured to drive the gate of the first power FET 208 at the first holding current. The first holding current is smaller than the first pull-down current.

Description

technical field Background technique [0001] In many applications, electric motors require high current (ie, greater than 100A) to operate. In many cases, these high currents are driven using special power field-effect transistors (FETs). Power FET operation is controlled with a gate driver circuit. The gate driver circuit may include a plurality of gate drivers, one of which may drive the power FET by generating a signal at a drive current (ie, pull-up current) to turn on the power FET. Similarly, the gate driver can pull down current (to pull current) to turn off the power FET. In this way, the gate driver circuit can control the operation of the power FETs. Sometimes, a short occurs within a power FET or in its physical wiring. In conventional systems, the gate drivers are configured to generate pull-down currents for all power FETs of the system as soon as a short circuit within the power FETs is detected. This pull-down current is consistently provided to the gates ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/32
CPCH02M1/32H02M1/325H02M1/08H03K17/08122H03K17/122H03K17/6871H02P29/0241
Inventor T·亚马那卡S·布拉萨布拉马尼安T·檀娜卡M·加格
Owner TEXAS INSTR INC