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Thin film transistor and display panel

A technology of thin-film transistors and substrates, which is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as complex manufacturing processes, and achieve the effect of reducing the cut-off current

Inactive Publication Date: 2020-08-11
SAKAI DISPLAY PROD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if TFTs with different structures are formed on one substrate, the manufacturing process becomes complicated

Method used

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  • Thin film transistor and display panel
  • Thin film transistor and display panel
  • Thin film transistor and display panel

Examples

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Embodiment Construction

[0042] Hereinafter, the present invention will be described based on drawings showing embodiments of the present invention. figure 1 is a schematic plan view of the main part of the first example showing the structure of the thin film transistor of the present embodiment, figure 2 From figure 1 Schematic cross-sectional view of the main part of the II-II line observation. Such as figure 2As shown, a thin film transistor (TFT: Thin Film Transistor, also referred to as a TFT substrate) has a gate electrode 2 formed on the surface of a glass substrate 1 (also referred to as a substrate), and a gate insulating film 3 covering the gate electrode 2 is formed ( For example, if it is an organic film, it is TEOS, and if it is an inorganic film, it is SiO 2 Film, SiO 2 / SiN film stack, SiN film, SiON film, etc.).

[0043] Additionally, if figure 1 , figure 2 As shown, on the surface of the gate insulating film 3, that is, on the upper side of the gate electrode 2, there are fo...

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Abstract

The invention provides a thin film transistor capable of reducing cut-off current and a display panel with the thin film transistor. The thin film transistor comprises: a gate electrode (2), formed on the surface of the substrate (1); a first amorphous silicon layer (4), formed on the upper side of the gate electrode (2); a plurality of polysilicon layers (51, 52, 53 ), are separated by the first amorphous silicon layer (4), and have the desired spacing dimension and are formed on the upper side of the gate electrode (2); the second amorphous silicon layer (6) and the n+ silicon layer (7), It is formed on the upper side of multiple polysilicon layers (51, 52, 53) and the first amorphous silicon layer (4); the source electrode (8) and the drain electrode (9) are formed on the n+ silicon layer (7).

Description

technical field [0001] The invention relates to a thin film transistor and a display panel with the thin film transistor. Background technique [0002] In the TFT (Thin Film Transistor: Thin Film Transistor) liquid crystal display, the TFT substrate and the color filter substrate with R (red), G (green), and B (blue) colors are provided at the required intervals. Combined, liquid crystal is injected between the TFT substrate and the color filter substrate, and the light transmittance of the liquid crystal molecules is controlled for each pixel, thereby displaying images. [0003] In the TFT substrate, the data lines and the scan lines are arranged in a grid pattern in the vertical and horizontal directions, and pixels composed of TFTs are formed at the intersections of the data lines and the scan lines. In addition, a driving circuit composed of TFTs for driving data lines and scanning lines is formed around a display area composed of a plurality of pixels. [0004] Accord...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/78609H01L29/78696H01L29/78669H01L29/78678H01L29/78663H01L29/78672
Inventor 石田茂野寺伸武高仓良平松岛吉明松本隆夫小林和树桶谷大亥
Owner SAKAI DISPLAY PROD
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