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Method for preparing graphene film

A graphene film and graphite technology, applied in graphene, biochemical equipment and methods, gaseous chemical plating, etc., can solve the problems of large waste of process gas, slow growth speed, uneven film formation, etc. slow, promotes optimal growth effects

Inactive Publication Date: 2017-12-12
江苏星特亮科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there are problems such as slow growth rate, uneven film formation, and large waste of process gas, which directly affect the quality and production cost of graphene films.

Method used

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  • Method for preparing graphene film

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Embodiment Construction

[0022] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings.

[0023] see figure 1 Shown, above-mentioned a kind of method for preparing graphene film, comprises the following steps:

[0024] (1) Set up the vacuum chamber 1 .

[0025] (2) A conveying mechanism for conveying the graphene foil 10 is provided in the vacuum chamber 1, so that the conveying mechanism includes a transmission starting end of the graphene foil 10 (see figure 1 As shown, the origin of the transmission is figure 1 The first transmission component at the right end of ) and the second transmission component located at the transmission end of the graphene foil tape 10; wherein, the second transmission component has electrical conductivity.

[0026] In the present embodiment, the graphene foil tape 10 is conveyed along the horizontal direction; the first conveying assembly includes an unwinding wheel 4 and a first guide wheel 5 in s...

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Abstract

The invention discloses a method for preparing a graphene film. A certain voltage is applied to space between a second conveying assembly and an air nozzle, an electric field is generated between a graphene foil tape and the air nozzle, and optimal growth of the graphene film is promoted under the effect of the electric field. The problems that in the prior art, the graphene film grows slowly, film formation is not even, a large amount of process gas is wasted and the like are solved.

Description

technical field [0001] The invention relates to the technical field of graphene film preparation, in particular to a method for preparing graphene film. Background technique [0002] Graphene is an excellent new functional material, which is widely used in solar cells, sensors, microelectronics, flexible display, energy storage and other fields. At present, it is mainly prepared by conventional CVD method, that is, the graphene foil strip is heated to the temperature required by the process, and then The process gas is introduced, and the graphene film is formed by spontaneous reaction growth on the surface of the graphene foil. [0003] Because the graphene thin film production device that prior art adopts, realize by spontaneous reaction. Therefore, there are problems such as slow growth rate, uneven film formation, and large waste of process gas, which directly affect the quality and production cost of graphene films. Contents of the invention [0004] The object of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184C23C16/455C23C16/26
CPCC23C16/26C23C16/455C23C16/45563C23C16/46C23C16/545C07D239/00C12N9/1096C12P13/06
Inventor 李留臣周正星蒲红斌
Owner 江苏星特亮科技有限公司