Method for repairing a mask

Abstract

A method includes inspecting a mask to locate a defect region for a defect of the mask. A phase distribution of an aerial image of the defect region is acquired. A point spread function of an imaging system is determined. One or more repair regions of the mask are identified based on the phase distribution of the aerial image of the defect region and the point spread function. A repair process is performed to the one or more repair regions of the mask to form one or more repair features.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and more particularly to methods for repairing masks. Background technique [0002] In the semiconductor integrated circuit (IC) industry, technological advances in IC materials and design have produced multiple generations of ICs, each with smaller and more complex circuits than the previous generation. During IC evolution, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) decreases. This scale-down process typically provides many benefits by increasing throughput efficiency and reducing associated costs. Such scaling down also increases the complexity of handling and manufacturing ICs. [0003] For example, the need to implement higher resolution lithography processes has grown. One lithography technique used to address th...

AI Technical Summary

Problems solved by technology

However, defects underneath or inside the multiple layers of the EUV mask cannot be removed by standard repair techniques

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