Method for repairing a mask

A mask, area technology, applied in the field of repair mask

Inactive Publication Date: 2017-12-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, defects underneath or inside the multiple layers...

Method used

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  • Method for repairing a mask
  • Method for repairing a mask
  • Method for repairing a mask

Examples

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Embodiment Construction

[0027] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first part over or on a second part can include embodiments in which the first part and the second part are in direct contact, and can also include additional parts formed between the first part and the second part Embodiments such that the first part and the second part are not in direct contact. Furthermore, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for brevity and clarity only and does not in itself represent a relationship between the various embodiments and / or configurations discussed.

[0028] Furthermore, for ease of description, spatia...

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Abstract

A method includes inspecting a mask to locate a defect region for a defect of the mask. A phase distribution of an aerial image of the defect region is acquired. A point spread function of an imaging system is determined. One or more repair regions of the mask are identified based on the phase distribution of the aerial image of the defect region and the point spread function. A repair process is performed to the one or more repair regions of the mask to form one or more repair features.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and more particularly to methods for repairing masks. Background technique [0002] In the semiconductor integrated circuit (IC) industry, technological advances in IC materials and design have produced multiple generations of ICs, each with smaller and more complex circuits than the previous generation. During IC evolution, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) decreases. This scale-down process typically provides many benefits by increasing throughput efficiency and reducing associated costs. Such scaling down also increases the complexity of handling and manufacturing ICs. [0003] For example, the need to implement higher resolution lithography processes has grown. One lithography technique used to address th...

Claims

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Application Information

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IPC IPC(8): G03F1/72
CPCG03F1/72G03F1/84G06T7/001G06T2207/10056G06T2207/30148G06T7/11G03F1/24G03F1/26G06T7/0004G06T2207/10004H01L21/0273
Inventor 游信胜严涛南王文娟秦圣基
Owner TAIWAN SEMICON MFG CO LTD
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