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Ultra-Low-Power Low-Voltage Bandgap Reference

A reference voltage source and ultra-low power consumption technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve problems such as poor performance, and achieve the effect of small temperature coefficient and low power consumption

Active Publication Date: 2018-12-18
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This structure is affected by the offset voltage and the base current of the triode, and the performance is poor

Method used

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  • Ultra-Low-Power Low-Voltage Bandgap Reference
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Embodiment Construction

[0018] The structure of the reference voltage source proposed by the present invention is as figure 2 shown. The gates of PMOS transistors M3, M4, and M5 are connected, the source is connected to the power supply VDD, and the gate and drain of M3 are connected. The drain of NMOS transistor M1 is connected to the drain of M3, the source is grounded, the drain of NMOS transistor M2 is connected to the drain of M4, and the source passes through the resistor R PTAT Grounded, M1, M2 grid connected, and connected to the ground resistance R CTAT . The source of the PMOS transistor M6 is connected to the power supply VDD, the drain is connected to the gates of M1 and M2, and the gate is connected to the gate of M7. The source of the PMOS tube M7 is connected to the power supply VDD, and the drain passes through the resistor R OUT Grounded and connected to the drain of M5 at the same time. The negative input and positive input terminals of the transconductance operational amplifi...

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Abstract

The invention relates to the field of integrated circuits and aims at providing an ultra-low power consumption voltage source which can work under the low supply voltage and is not sensitive to the change of supply voltage. According to the ultra-low power consumption low-voltage band gap reference voltage source, an M3 grid electrode, an M4 grid electrode, an M5 grid electrode of a PMOS tube are connected, and a source electrode is connected with a power supply VDD and is connected with an M3 grid drain electrode; an M1 drain electrode of an NMOS tube is connected with an M3 drain electrode, a source electrode is connected to the ground, an M2 drain electrode of the NMOS tube is connected with an M4 drain electrode, the source electrode is connected to the ground through a resistor RPTAT, an M1 grid electrode is connected with an M2 grid electrode, and a resistor RCTAT is connected between the M1 grid electrode and the ground and between the M2 grid electrode and the ground respectively; an M6 source electrode of the PMSO tube is connected with the power supply VDD, the drain electrode is connected with the M1 grid electrode and the M2 grid electrode, and a grid electrode is connected with an M7 grid electrode; an M7 source electrode of the PMOS tube is connected with the power supply VDD, the drain electrode is connected to the ground through a resistor ROUT, and meanwhile the drain electrode is connected with an M5 drain electrode; the M3 drain electrode and the M4 drain electrode are connected to the negative input end and the positive input end of an operational transconductance amplifier respectively. The ultra-low power consumption low-voltage band gap reference voltage source is mainly applied to design and production of the voltage source.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to the application in radio frequency circuits or ultra-low power consumption sensors, which can provide low-voltage reference voltage sources with ultra-low power consumption. Specifically, it relates to an ultra-low-power low-voltage bandgap reference voltage source. Background technique [0002] In recent years, in order to detect physical and environmental information in different locations, the coverage of sensor networks has become more and more extensive. Generally speaking, the sensors at each node are powered by batteries, which imposes strict requirements on the power consumption of the sensors. For this reason, low power consumption and low voltage have become the inevitable requirements of the reference voltage source it adopts. In addition, in the radio frequency circuit, low voltage and low power consumption can ensure faster start-up and higher receiving sensitivi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 徐江涛赵希阳高静史再峰聂凯明
Owner TIANJIN UNIV
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