Preparation method of nano-heterostructure
A nano-heterostructure, nano-technology, applied in nano-structure manufacturing, nano-technology, nano-technology and other directions, can solve problems such as limiting the scope of application, and achieve the effect of low energy consumption and high integration
Active Publication Date: 2020-09-25
TSINGHUA UNIV +1
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Problems solved by technology
However, the heterostructure of this material obtained by the existing heterostructure preparation method is usually a micron structure, which limits its application range to some extent.
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[0015] The nano-heterostructure of the present invention, its preparation method and the semiconductor device using the above-mentioned nano-heterostructure will be further described in detail below with reference to the accompanying drawings.
[0016] see figure 1 , the first embodiment of the present invention provides a nano-heterostructure 100 . The nanoheterostructure 100 includes a first metallic carbon nanotube 102 , a semiconducting carbon nanotube 104 , a semiconductor layer 106 and a second metallic carbon nanotube 108 . The semiconductor layer 106 includes a first surface and an opposite second surface, the first metal-type carbon nanotubes 102 and the semiconductor-type carbon nanotubes 104 are arranged on the first surface in parallel and at intervals, and the second metal Type carbon nanotubes 108 are disposed on the second surface. Both the first metal-type carbon nanotubes 102 and the semiconductor-type carbon nanotubes 104 extend toward a first direction, th...
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Abstract
A method for preparing a nano-heterostructure, comprising: providing a support structure, forming a first carbon nanotube layer on the support structure, the first carbon nanotube layer including a plurality of first carbon nanotubes; in the first A semiconductor layer is formed on a carbon nanotube layer; a second carbon nanotube layer is covered on the semiconductor layer, and the second carbon nanotube layer includes a plurality of second carbon nanotubes; on the first carbon nanotube Find a first metallic carbon nanotube and a semiconducting carbon nanotube that are arranged parallel and at intervals in the layer, identify the first metallic carbon nanotube and semiconducting carbon nanotube, and find in the second carbon nanotube layer A second metallic carbon nanotube is produced, the extension direction of the second metallic carbon nanotube crosses the extension direction of the first metallic carbon nanotube and the semiconducting carbon nanotube, and the second metallic carbon nanotube is identified tubes, etching and removing the remaining first carbon nanotubes and second carbon nanotubes; and annealing the above structure.
Description
technical field [0001] The invention relates to a method for preparing a nano-heterostructure. Background technique [0002] A heterojunction is an interface region formed by the contact of two different semiconductor materials. According to the different conductivity types of the two materials, heterojunctions can be divided into homogeneous heterojunctions (P-p junctions or N-n junctions) and heterogeneous heterojunctions (P-n or p-N) junctions. Multilayer heterojunctions are called heterostructures. Usually the conditions for forming heterogeneity are: two semiconductors have similar crystal structure, similar atomic distance and thermal expansion coefficient. Using interfacial alloys, epitaxial growth, vacuum deposition and other techniques, heterojunctions can be fabricated. The heterojunction often has excellent photoelectric characteristics that cannot be achieved by the PN junctions of the two semiconductors, making it suitable for making ultra-high-speed switching...
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IPC IPC(8): H01L21/8238B82B3/00B82B1/00H10K99/00
CPCH10K71/40H10K85/221H10K10/484H10K10/486H10K71/70H10K71/80H10K71/191H10K71/231H10K71/811H10K2102/00
Inventor 张金魏洋姜开利范守善
Owner TSINGHUA UNIV