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photodetector

A photodetector and current detection technology, which is applied in the field of photodetectors, can solve problems affecting the application range and achieve the effects of small size, low energy consumption and high integrity

Active Publication Date: 2019-08-13
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by the technical level, semiconductor devices are often micron structures, which limits the size of the photodetector to a certain extent and affects its application range.

Method used

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Embodiment Construction

[0019] The organic light emitting diode manufacturing method and manufacturing device of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0020] see figure 1 and figure 2 , the first embodiment of the present invention provides a nano-heterostructure 100 . The nanoheterostructure 100 includes a first carbon nanotube 102 , a semiconductor layer 104 and a second carbon nanotube 106 . The first carbon nanotube 102 extends toward a first direction. The thickness of the semiconductor layer 104 is 1-100 nanometers. The second carbon nanotubes 106 are disposed on the surface of the semiconductor layer 104 such that the semiconductor layer 104 is disposed between the first carbon nanotubes 102 and the second carbon nanotubes 106 . The second carbon nanotubes 106 extend toward a second direction, and the second direction forms an included angle with the first direction, and the included angle is greater than 0 degrees ...

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Abstract

A photodetector comprising a nano-heterostructure, a first electrode, a second electrode, a current detection element and a power supply, the nano-heterostructure comprising a first carbon nanotube, a semiconductor layer and a the second carbon nanotube, the first carbon nanotube is electrically connected to the first electrode, the second carbon nanotube is electrically connected to the second electrode, and the first electrode and the second electrode are electrically connected to the current detection element, The power supply is electrically connected to the first electrode and the second electrode, and the first electrode, the second electrode, the current detection element and the power supply form a loop structure.

Description

technical field [0001] The invention relates to a photodetector. Background technique [0002] A photodetector is a device that detects light energy. The working principle of general photodetectors is based on the photoelectric effect, based on the fact that the material absorbs light radiation energy and changes its electrical properties, so that the existence of light and the magnitude of light energy can be detected. Semiconductor devices are increasingly used in photodetectors. However, limited by the technical level, semiconductor devices are often micron structures, which limits the size of the photodetector to a certain extent and affects its application range. Contents of the invention [0003] In view of this, it is indeed necessary to provide a novel photodetector. [0004] A photodetector comprising a nano-heterostructure, a first electrode, a second electrode, a current detection element and a power supply, the nano-heterostructure comprising a first carbon ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/108H01L31/18H01L51/05H01L51/30H01L51/40B82Y30/00B82Y40/00
CPCC22C26/00C22C2026/002Y02E10/549B82Y30/00B82Y20/00B82Y40/00Y10S977/75Y10S977/827Y10S977/842Y10S977/938Y10S977/954H10K71/191H10K71/40H10K85/221H10K30/10H10K10/486B82Y10/00C30B29/46C30B33/00
Inventor 张金魏洋姜开利范守善
Owner TSINGHUA UNIV