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A Method for Measuring Thermal Deformation of Chips Based on Scanning Electron Microscope

An electron microscope and measurement method technology, which is applied in measurement devices, material thermal analysis, utilizing wave/particle radiation, etc., can solve the problems of complex image distortion, reducing the measurement accuracy of chip thermal deformation, and affecting the stability of scanning electron microscopes. high-resolution effects

Active Publication Date: 2019-05-21
HUAZHONG UNIV OF SCI & TECH +1
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  • Abstract
  • Description
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Problems solved by technology

However, since the imaging principle of the scanning electron microscope is different from that of ordinary optical imaging equipment, there are complex distortions in the image; the variable temperature environment will also affect the stability of the scanning electron microscope and bring additional thermal noise; the above factors will reduce the chip Measurement accuracy of thermal deformation

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  • A Method for Measuring Thermal Deformation of Chips Based on Scanning Electron Microscope
  • A Method for Measuring Thermal Deformation of Chips Based on Scanning Electron Microscope
  • A Method for Measuring Thermal Deformation of Chips Based on Scanning Electron Microscope

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[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0045] figure 1 A schematic diagram of a chip thermal deformation measurement system based on a scanning electron microscope provided for an embodiment of the present invention, as shown in figure 1 As shown, it specifically includes: a scanning electron microscope 1, a computer 2, a sample heating stage control box 3, a sample heating stage 4, a three-axis sample stage 5, a ceramic sheet 6 for...

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Abstract

The invention discloses a chip thermal deformation measurement method based on a scanning electron microscope and belongs to the technical field of material performance detection. According to the method, high depth of field and high resolution characteristics of the scanning electron microscope are utilized, and through integration with an in-situ heating device, measurement errors caused by thethermal influence and system distortion are fully considered and corrected; and by utilization of a speckle image after the distortion correction, an in-plane deformation field resulting from the deformation of a chip caused by heating is calculated through a digital image related algorithm. On the basis, micro-nanoscale chip full-field thermal deformation measurement is achieved, and the method is applied in practical engineering.

Description

technical field [0001] The invention belongs to the technical field of material performance detection, and in particular relates to a chip thermal deformation measurement method based on a scanning electron microscope. Background technique [0002] With the continuous progress of the semiconductor industry, micro-electro-mechanical systems (Micro Electro-Mechanical Systems, MEMS) have been greatly developed. MEMS devices are usually packaged and manufactured in the form of chip assemblies. Chip components are usually composed of a variety of different nanomaterials. The elastic modulus and thermal expansion coefficient of the materials are different. Under different loads, humidity and temperature conditions, cracks are prone to occur at the material junctions and lead to chip failure. Especially in the packaging process, there are differences in the thermal expansion coefficients of the materials in each layer. After packaging, there is a large thermal stress and residual ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N25/00G01B11/16G01B15/06
CPCG01B11/16G01B15/06G01N25/00
Inventor 李中伟刘行健史玉升
Owner HUAZHONG UNIV OF SCI & TECH