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Stacked Capacitor Structure

A capacitor structure, stacking technology, applied in the direction of capacitors, circuits, electrical components, etc., can solve the problem of inability to form induced current, and achieve the effect of improving the quality factor

Active Publication Date: 2020-07-10
REALTEK SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The eddy current effect is another source of substrate loss. In order to avoid the eddy current effect on the ground shield layer, the shield layer needs to be cut into a special pattern so that the induced current cannot form

Method used

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Embodiment Construction

[0056] In order to make the description of the present invention more detailed and complete, reference may be made to the attached drawings and various embodiments described below, and the same numbers in the drawings represent the same or similar elements. On the other hand, well-known elements and steps have not been described in the embodiments in order to avoid unnecessarily limiting the invention.

[0057] figure 1 It is a top view of a stacked capacitor structure 100 according to the first embodiment of the present invention. Such as figure 1As shown, the stacked capacitor structure 100 is located below the inductive element 110 . In the first embodiment, the inductive element 110 can be an inductor, a transformer or similar elements. Regarding the planar layout of the metal layers of the stacked capacitors in the first embodiment, it will be matched with Figure 4 Examples to illustrate. As for the layer-by-layer planar pattern in the stacked capacitor structure 10...

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Abstract

Provided is a stacked capacitor structure. The stacked capacitor structure includes a metal-oxide semiconductor capacitor and a stacked capacitor which is electrically connected with the metal-oxide semiconductor capacitor. The metal-oxide semiconductor capacitor includes a substrate, a grid electrode, a first source / drain electrode and a second source / drain electrode. The substrate is provided with a well region, and the grid electrode is located on the well region. The first source / drain electrode and the second source / drain electrode are formed in the well region separately and at the two opposite sides of the grid electrode. The stacked capacitor includes a plurality of metal layers which are stacked on the grid electrode at intervals and below an inductive element.

Description

technical field [0001] The present invention relates to a device, and more particularly to a device having a stacked capacitor structure. Background technique [0002] Since the inductor / transformer element of the integrated circuit is made on the silicon substrate, the electromagnetic energy generated during the operation of the inductor / transformer will be coupled to the silicon substrate, forming a silicon substrate loss and reducing the quality factor of the inductor / transformer. [0003] Inductor / transformer components will generate displacement current when operating at high frequency. Generally, the resistivity of the commonly used silicon substrate is about 10-15 ohm-cm, and the current flowing through the resistance of the silicon substrate will cause energy loss. Without considering the eddy current effect, the substrate of the inductor / transformer can make the substrate loss approach zero under two ideal conditions: one is that the substrate resistance is infinite...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/94H01L23/64
CPCH01L27/0629H01L28/60H01L29/94
Inventor 黄凯易林圣纮简育生叶达勋
Owner REALTEK SEMICON CORP