Method for solving bridging and breaking of polysilicon layers

Abstract

The invention provides a method for solving bridging and breaking of polysilicon layers. The method comprises the steps of obtaining a complete design layout comprising polysilicon layers and reference layers, such as active area layers and contact hole layers, selecting out patterns of which the line widths are smaller than a first set line width and the pattern distances are smaller than a firstset pattern distance for the polysilicon layers and marking the selected patterns as defective patterns; selecting out edges of which the line widths of the polysilicon layers are smaller than a second set line width and the distances to the adjacent patterns are smaller than a second set pattern distance for the defective patterns and carrying out expanding or merging operation on the edges andthe parts opposite to the adjacent patterns; generating polysilicon layer cutting patterns, generating a rectangle through the part opposite to the adjacent edge of each initial defective pattern andfilling one cutting pattern with the set size by employing the center of the rectangle as the origin; and carrying out subsequent correction processing of normal OPC on the generated polysilicon layercutting patterns to obtain an OPC result. According to the method, the problem of bridging or breaking is solved through carrying out expanding or merging operation on the polysilicon layers and adding corresponding polysilicon layer cutting patterns at the same time.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, and in particular to a solution to polysilicon layer bridging disconnection. Background technique [0002] As the integration level of semiconductor chips continues to increase, the feature size of transistor gates is also reduced. Reducing the line width of the gate photolithography pattern can improve the integration level. However, due to the resolution limit of the optical exposure tool (resolution limit), it is easy to produce optical proximity effect (optical proximity effect, OPE), such as right-angled corner circularization (right-angled corner rounded), line end shortened, and line width increase / decrease are common optical proximity effects that cause defects in reticle pattern transfer to the wafer. The traditional method is to perform optical proximity correction (OPC) on the photomask to correct these defects. However, at the 32nm and below nodes, the c...

AI Technical Summary

Problems solved by technology

[0003] The present invention proposes a solution to bridge and disconnection of polysilicon layers, by expanding or merging polysilicon layers, and adding corresponding polysilicon cutting patterns at the same time, to solve the above bridging or disconnection problems

Images