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Magnetron sputtering method and device

A magnetron sputtering device and magnetron sputtering technology are applied in sputtering coating, ion implantation coating, metal material coating process and other directions, which can solve the problems of reducing the firmness of thin film coating and affecting the yield of PVD products. , to achieve the effect of high integration, avoiding damage and high sputtering efficiency

Inactive Publication Date: 2018-02-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current vacuum state of the chamber is not detected before magnetron sputtering in the process chamber. If the vacuum state cannot meet the process requirements due to the increase in the outgassing of the tray, the firmness of the thin film coating will be reduced, thereby affecting the yield of PVD products.

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  • Magnetron sputtering method and device
  • Magnetron sputtering method and device

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Embodiment Construction

[0046] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0047] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0048] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0049] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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Abstract

The invention discloses a magnetron sputtering method and device. The magnetron sputtering method comprises the steps that 1, a to-be-machined workpiece is moved into a technology cavity and placed ona base; 2, the base is moved to a heating position, and the to-be-machined workpiece is heated, and enters in the step 3 when the temperature of the to-be-machined workpiece reaches a preset temperature; 3, the vacuum state of the technology cavity is detected, if the magnetron sputtering technology requirements are met, the step 4 is conducted, and if not, the process returns back to the step 2;and 4, the base is moved to a technology position, and magnetron sputtering is conducted on the to-be-machined workpiece. The magnetron sputtering method can detect the temperature of the to-be-machined workpiece and the pressure rising rate of the sputtering environment so as to ensure that the preset magnetron sputtering conditions are reached, and thus the yield of sputtering products is improved greatly.

Description

technical field [0001] The present invention relates to the technical field of physical vapor deposition, and more particularly, to a magnetron sputtering method and a magnetron sputtering device used in the method. Background technique [0002] PVD (Physical Vapor Deposition), as a thin film deposition technology, is mainly used for the deposition of various functional thin films, and is widely used in pan-semiconductor fields such as integrated circuits, solar cells, LEDs, and flat panel displays. [0003] In the production process of some PVD processes, thin film sputtering is usually carried out at high temperature, and the wafer (wafer) on the tray needs to be preheated to the process temperature by a heater. For example AlN (aluminum nitride) film deposition. This high-temperature PVD process has strict requirements on chamber cleanliness, vacuum conditions, and temperature. Cooling to meet the temperature requirements of the manipulator for handling the substrate. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/35C23C14/54
Inventor 姚艳双张鹤南董博宇郭冰亮张军武学伟徐宝岗崔亚欣马怀超刘绍辉王军
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD