A Czochralski Silicon Single Crystal Growth Process Optimization Method for Adjusting the Oxygen Distribution at the Solid-Liquid Interface

Abstract

The invention discloses an adjustment method for optimizing oxygen distribution at a solid and liquid interface during a Czochralski silicon single crystal growth process. The method includes the following steps: a) adjusting superconductive horizontal magnetic field intensity so as to obtain solid liquid interface oxygen concentration distribution curves under different magnetic field intensities; b) calculating average oxygen concentration of the solid liquid interface and uniformity of radial oxygen concentration distribution of the solid liquid interface, and performing comparison to select a proper magnetic field intensity; c) under the selected magnetic field intensity, respectively adjusting rotational speeds of a crystal and a crucible, and performing comparison with an simulationresult to obtain the rotational speeds of the crystal and the crucible, which are suitable for reducing the oxygen concentration of the solid liquid interface and improving the uniformity of oxygen concentration distribution of the solid liquid interface; d) finally, with combination of the selected magnetic field intensity, the rotational speed of the crystal and the rotational speed of the crucible, acquiring of oxygen concentration distribution information of the solid and liquid interface during Czochralski silicon single crystal growth under effect of the superconductive horizontal magnetic field. The method solves problems of excessively high oxygen content and non-uniform oxygen distribution which are liable to appear in parameter adjustment during the Czochralski silicon single crystal growth process in the prior art.

Description

technical field [0001] The invention belongs to the technical field of a method for adjusting the oxygen distribution growth process at the solid-liquid interface of a magnetically controlled Czochralski silicon single crystal, and in particular relates to a method for adjusting the oxygen distribution at the solid-liquid interface optimized for the Czochralski silicon single crystal growth process. Background technique [0002] The Czochralski method is the main method for preparing silicon single crystal semiconductor materials in the fields of integrated circuits and photovoltaic power generation. The main quality evaluation indicators for silicon single crystals in the semiconductor industry include reducing the content of various harmful impurities (oxygen, carbon) in the wafer and reducing micro-defects. Among them, the secondary defects caused by the content of oxygen impurities will seriously affect the drawn silicon. The quality of semiconductor materials and the pe...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for adjusting the oxygen distribution at the solid-liquid interface to optimize the Czochralski silicon single crystal growth process, which solves the problem that the oxygen content in the crystal is too high when the parameters of the Czochralski silicon single crystal growth process are adjusted in the prior art. , the problem of uneven oxygen distribution

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