Unlock instant, AI-driven research and patent intelligence for your innovation.

Humidity sensor as well as preparation method of same

A humidity sensor, humidity sensing technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of low linearity of humidity response

Active Publication Date: 2018-03-02
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
View PDF13 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although most of these new materials show better sensitivity and response speed than common commercial humidity sensors, the linearity of response to humidity is still low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Humidity sensor as well as preparation method of same
  • Humidity sensor as well as preparation method of same
  • Humidity sensor as well as preparation method of same

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] Such as figure 2 As shown, the preparation method of the humidity sensor in one embodiment is a preparation method of the above-mentioned humidity sensor, and the preparation method of the humidity sensor includes the following steps:

[0045] Step S210: forming electrodes on the substrate.

[0046] Wherein, the material of the substrate is an insulating material such as glass, ceramics, and organic polymer film. Alternatively, the substrate can also be a silicon wafer with a silicon dioxide layer formed on the surface; the thickness of the silicon dioxide layer is 2 microns to 20 microns.

[0047] Specifically, the electrodes are interdigital electrodes.

[0048] Further, the width of each finger of the electrode is 2 micrometers to 2 millimeters; the distance between two adjacent fingers is 2 micrometers to 2 millimeters.

[0049] Specifically, the electrode includes a conductive layer, and the material of the conductive layer is selected from one of gold, aluminu...

Embodiment 1

[0068] The preparation process of the humidity sensor of this embodiment is as follows:

[0069] (1) On the silicon wafer with a silicon dioxide layer with a thickness of 20 microns, the electrode pattern is formed by photolithography, and then the interdigitated electrode is formed by electron beam evaporation. The width of each interdigitated electrode of the interdigitated electrode is is 20 microns, the distance between two adjacent interdigital fingers is 20 microns, and the area of ​​the interdigital electrodes is 3mm×5mm. Wherein, the interdigital electrode is composed of a stacked chromium layer with a thickness of 5 nanometers and a gold layer with a thickness of 50 nanometers, and the side of the chromium layer away from the gold layer is stacked with the silicon dioxide layer of the silicon wafer.

[0070] (2) Mix the first moisture-sensitive material with water evenly, and adjust the pH value to 10 with ammonia water to obtain a pre-prepared liquid; mix the second ...

Embodiment 2

[0073] The preparation process of the humidity sensor of this embodiment is as follows:

[0074] (1) On the silicon wafer with a silicon dioxide layer with a thickness of 2 microns, the electrode pattern is formed by photolithography, and then the interdigitated electrode is formed by electron beam evaporation. The width of each interdigitated electrode of the interdigitated electrode is The distance between two adjacent fingers is 2 microns, and the area of ​​the interdigital electrodes is 3mm×5mm. Wherein, the interdigital electrode is composed of a stacked chromium layer with a thickness of 6 nanometers and a gold layer with a thickness of 100 nanometers, and the side of the chromium layer away from the gold layer is stacked with the silicon dioxide layer of the silicon wafer.

[0075] (2) Mix the first moisture-sensitive material with water evenly, and adjust the pH value to 10 with ammonia water to obtain a pre-prepared liquid; mix the second moisture-sensitive material w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a humidity sensor as well as a preparation method of same. The humidity sensor includes a substrate, an electrode, and a humidity sensing layer, wherein the electrode is arranged on the substrate, and the humidity sensing layer is arranged on the substrate and completely covers the electrode. The humidity sensing layer includes a first humidity sensing material and a second humidity sensing material according to mass ratio of 8:1-1:8, wherein the first humidity sensing material is at least one selected from graphene oxide, modified graphene oxide and oxidized carbon nano-tubes, and the second humidity sensing material is at least one selected from perfluorosulfonic acid and sulfonated polyether-ether-ketone. The humidity sensor is high in linearity of humidity responding.

Description

technical field [0001] The invention relates to the technical field of humidity detection, in particular to a humidity sensor and a preparation method thereof. Background technique [0002] Humidity sensor is a kind of sensor that can detect environmental humidity and convert it into an output signal. It is the most widely used type of sensor. The linearity of the humidity sensor's response to humidity can not only affect the accuracy of the humidity sensor, but also affect the complexity and cost of the humidity sensor structure. [0003] At present, many new materials have been reported to be applied to humidity sensors, such as graphene oxide and its derivatives, carbon oxide nanotubes and its derivatives, and various polymer materials containing hydrophilic functional groups. Although most of these new materials show better sensitivity and response speed than common commercial humidity sensors, the linearity of response to humidity is still low. Contents of the invent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/122G01N27/127
Inventor 汪飞冷小辉
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA