Patterned bank structures on substrates and methods of formation

A substrate and bank technology, applied to the patterned bank structure and formation field on the substrate, can solve the problems of increased thickness unevenness and the contact angle cannot be too low

Active Publication Date: 2022-02-01
MERCK PATENT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for organic layers, the contact angle on the substrate cannot be too low, as this would lead to increased thickness non-uniformity of the layer, especially when the well region is very small (see Figure 1e and Figure 1f )

Method used

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  • Patterned bank structures on substrates and methods of formation
  • Patterned bank structures on substrates and methods of formation
  • Patterned bank structures on substrates and methods of formation

Examples

Experimental program
Comparison scheme
Effect test

other Embodiment approach

[0082] Other embodiments may include fabrication of organic electronic (OE) devices, such as top-gate or bottom-gate organic field-effect transistors (OFETs), including organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), or organic photovoltaic (OPV) devices, including solar cells and photoelectric sensors).

[0083] Embodiments of the invention also include products or assemblies comprising organic electronic devices as described above and below. Such products or components are integrated circuits (ICs), radio frequency identification (RFID) tags, security tags or security devices incorporating RFID tags, flat panel displays (FPDs), backplanes for FPDs, backlights for FPDs, electrowetting devices, electronic Photographic devices, electrophoretic devices, electrophotographic recording devices, organic memory devices, sensors, biosensors or biochips. The present invention also relates to a method of preparing an organic electronic device, such as a to...

Embodiment 1

[0091] A commercially available cresol novolac resin mixture CNR1 (10 parts; composition described below) and fluorinated materials A, B, C, and D (1 part) in a resin:fluorinated material weight ratio of 2.3:1 The resist formulation was spin-coated at a thickness of 2 μm on a 50 nm thick ITO layer on a glass substrate. The photoresist was soft baked on a hot plate at 90 to 100° C. for 2 minutes to remove the solvent. Then, using a mask aligner, the photoresist was exposed using a photomask using 365 nm ultraviolet light. The exposed samples were developed in 2.5% TMAH aqueous solution, followed by rinsing several times with deionized water, then blow-dried and hard baked on a hot plate at 130 to 180 °C for 1 to 30 minutes.

[0092] CNR1 contains 23% cresol novolac resin, 3% 2-diazo-1-naphthoquinone sulfonate (DNQ of the present invention) of 2,3,4-trihydroxybenzophenone, 1% 2 , 6-bis(hydroxymethyl)-p-cresol crosslinker, 0.01% silicone dispersant and 73% 1-methoxy-2-propyl ac...

Embodiment 2

[0100] Using the same procedure as in Example 1, using the same mixture of cresol novolac resins and fluorosurfactant D of the present invention in the specified weight ratios, and using different thermal conditions, photoresist formulations were prepared. Measuring the contact angle of embankment to water (CA H2O ) and the contact angle of ITO substrate to 3-phenoxytoluene (CA 3PT ) and are shown in Table 2.

[0101] Table 2 - Contact angles for Experiment 2

[0102]

[0103]

[0104] Note that in Table 2, the ratio of resin:fluorosurfactant of the present invention is greater than 2:1, ideally below 10:1, more ideally below 7:1, in order to obtain the non-wetting properties of the bank structure. Bigger improvements. This is particularly desirable when the active material is introduced into the trap from an aqueous solution. After the photoresist process, the wetting properties of the ITO substrates improved and most of the improvement was preserved in the presence...

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Abstract

A photolithographic method for producing a bank structure with improved non-wetting properties to form a well region on a substrate using a photoresist composition comprising a cresol novolac resin, having A photosensitive diazonaphthoquinone sulfonate ester of a polyhydroxybenzophenone compound with at least one free hydroxyl group, and a nonionic urethane polyglycol fluorosurfactant. Active materials may be deposited into the well region using an inkjet method. Color filter arrays and optoelectronic devices such as OLED devices can be fabricated by this method.

Description

technical field [0001] Embodiments according to the present invention generally relate to the use of specific photoresist formulations to form structures on substrates, more particularly to form membranes, insulating structures or bank structures on such substrates, and to methods comprising such structures Organic electronic devices or color filter arrays, and processes and methods for making such structures, and organic electronic devices or color filter arrays comprising such structures. The photoresist formulation comprises a cresol novolak resin, a photosensitive diazonaphthoquinone sulfonate ester of a polyhydroxybenzophenone compound having at least one free hydroxyl group, and a nonionic urethane Polyglycol fluorosurfactant. Background technique [0002] Organic electronic devices such as organic electronic (OE) devices such as organic field-effect transistors (OFETs) or organic light-emitting diodes ( OLEDs), organic photovoltaic devices (OPVs), or color filter ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/022
CPCG03F7/0048G03F7/022G03F7/00G03F7/40G03F7/16G03F7/004G03F7/26G03F7/38G03F7/0236G03F7/0226G03F7/0007H01L21/3205H10K50/11G03F7/035G03F7/0381H01L31/04
Inventor 陈莉惠帕维尔·麦斯凯万茨格拉哈姆·史密斯
Owner MERCK PATENT GMBH
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