ZnO transparent conductive film and preparing method thereof

Abstract

The invention discloses a ZnO transparent conductive film, which is characterized in that it comprises: a substrate; a first type epitaxial layer located on the substrate; an Au plated structure layer located on the first type epitaxial layer away from the One side of the substrate; the second type epitaxial layer, located on the side of the Au-plated structure layer away from the Au-plated structure layer. Therefore, in the embodiment of the present invention, a ZnO / Au / ZnO film with a sandwich structure is prepared on a quartz substrate, and a layer of Au-plated structure is added between the two layers of ZnO films. The presence of Au element improves the ZnO The conductivity of the thin film can ensure that the ZnO thin film still has high electrical conductivity under the condition of relatively low thickness, and solves the problem of high resistivity of the ZnO thin film under the condition of small thickness.

Description

technical field [0001] The embodiments of the present invention relate to the field of semiconductor film preparation, in particular to a ZnO transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive thin film materials are more and more widely used in flat panel display, solar cell and other industries. In order to improve the conductivity of transparent conductive thin film materials, it is often necessary to do doping treatment on transparent conductive thin film materials. [0003] In the prior art, transparent conductive films are mainly obtained by doping metal elements into oxides, and the thickness of the obtained films is generally in the range of 150-250 nm, or even thicker, which is very thick for some optoelectronic devices Yes, but this thickness is already the limit for the doped transparent conductive film, and the resistivity will increase sharply if the film thickness is further reduced. [0004] Ther...

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Problems solved by technology

[0003] In the prior art, transparent conductive films are mainly obtained by doping metal elements into oxides, and the thickness of the obtained films is generally in the range of 150-250 nm, or even thicker, which is very thick for some optoelectronic devices Yes, but this thickness is already the limit for the doped transparent conductive film, and the resistivity will increase sharply if the film thickness is further reduced

[0004] Therefore, the present invention proposes a thin film with a sandwich structure and a preparation method thereof. It is found through testing that the thin film prepared by the present invention still has a relatively low resistivity when the film thickness is very small, which solves the problem that the transparent conductive film is not easy to resist. The problem of increased resistivity due to thickness reduction

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