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Method of machining device wafer

A processing method and device technology, which are applied in the field of device wafer processing, can solve the problems of reduced bending strength of device chips, difficulty in ensuring defect removal and bending strength, etc., so as to ensure defect removal and ensure resistance to The effect of bending strength

Pending Publication Date: 2018-04-06
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, when the device wafer is further thinned, there is a tendency for the bending strength of the device chip to decrease when the defect removal property is ensured
Therefore, when the device wafer is thinly formed, it is difficult to ensure both defect removal and bending strength.

Method used

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  • Method of machining device wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] A method of processing a device wafer according to Embodiment 1 of the present invention will be described with reference to the drawings. figure 1 It is a perspective view showing a device wafer to be processed in the device wafer processing method of the first embodiment. figure 2 It is a perspective view of a configuration example of a grinding and polishing apparatus used in the method of processing a device wafer according to the first embodiment. image 3 is showing figure 2 A perspective view of a structural example of a grinding member of the grinding and grinding device shown.

[0026] The processing method of the device wafer of Embodiment 1 is in figure 1 A removal layer G is formed on the back surface WR of the device wafer W shown, and the device wafer W is divided into device chips DT ( figure 1 in the dotted line) method. Such as figure 1 As shown, the device wafer W is a disk-shaped semiconductor wafer or an optical device wafer with silicon as a ...

Embodiment approach 2

[0050] A method of processing a device wafer according to Embodiment 2 of the present invention will be described with reference to the drawings. Figure 8 It is a figure which shows the grinding|polishing process of the processing method of the device wafer of Embodiment 2. Figure 9 It is a figure which shows the removal layer formation process of the processing method of the device wafer of Embodiment 2. in addition, Figure 8 and Figure 9 In , the same reference numerals are assigned to the same parts as those in Embodiment 1, and explanations thereof are omitted.

[0051]In the device wafer processing method of Embodiment 2 (hereinafter, simply referred to as the processing method), the structure of the polishing member 5 for performing the polishing step ST4 and the removal layer forming step ST5 is different from that of Embodiment 1, and is different from that of Embodiment 1 except that 1 is the same.

[0052] In the processing method of Embodiment 2 (hereinafter...

Deformed example 1

[0065] A method of processing a device wafer according to Modification 1 of each embodiment of the present invention will be described. In Embodiment 1 and Embodiment 2, the device DV of the device wafer W is a logic device, but in Modification 1, the device DV is a memory (flash memory or DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory), etc. memory) devices. In the method for processing a device wafer according to Modification 1, before processing with the grinding and polishing apparatus 1, ablation processing with laser LR or cutting processing with a cutting tool is used to form a gap that does not reach rear surface WR from front surface WS along planned dividing line S. After the trenches are divided into individual device chips DT by rough grinding and finishing grinding on the rear surface WR, a grinding step ST4 and a removal layer forming step ST5 are sequentially performed to form a removal layer G on the rear surface WR. In the modified example, ...

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Abstract

The invention provides a method of machining a device wafer. The method can guarantee the gettering performance and the bending strength of cut device chips. The method of machining a device wafer isto machine a device wafer with multiple devices formed on the front surface thereof. The method comprises a holding step of holding a front surface side of a device wafer by using a chuck workbench toexpose the back surface, and a gettering layer generation step of pressing a grinding pad against the back surface of the device wafer to generate a gettering layer while rotating the chuck workbenchand the grinding pad and supplying liquid containing no abrasive particles to the device wafer, wherein the grinding pad contains abrasive particles with a particle size of 0.35-1.7 [mu]m (median value) based on 20-50 weight% and the roughness (Ra) of the back surface of the device wafer subjected to the gettering layer generation step is 0.8nm-4.5nm.

Description

technical field [0001] The invention relates to a method for processing device wafers. Background technique [0002] In recent years, wafers on which devices have been formed (hereinafter referred to as “device wafers”) have been processed to be thinner for miniaturization of devices and the like. However, for example, when the device wafer is polished to make the thickness less than 100 μm, the removal effect of capturing metal elements such as Cu that is harmful to the device will be reduced (because the removal layer is removed), and there may be a defect in the operation of the device . [0003] In order to solve this problem, in a subsequent process of device manufacturing, a removal layer for trapping metal elements such as Cu is formed on the back surface of a wafer on which devices are formed. In Patent Document 1, it is described that chemical mechanical polishing (CMP) is performed on a ground wafer using a polishing pad using a polishing liquid, then a rinse liq...

Claims

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Application Information

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IPC IPC(8): H01L21/304
CPCH01L21/304H01L21/3043H01L21/31051H01L21/02016H01L21/78
Inventor 有福法久金子智洋
Owner DISCO CORP