Semiconductor Device and Method for Forming a Semiconductor Device
A semiconductor and device technology, applied in the field of semiconductor devices and used to form semiconductor devices, can solve the problems of increased power consumption and long switching time of semiconductor devices
Active Publication Date: 2018-04-06
INFINEON TECH DRESDEN
View PDF5 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, protection methods for semiconductor devices often cause other disadvantages, such as longer switching times of the semiconductor device, more process steps during the production of the semiconductor device, and / or increased power consumption of the semiconductor device
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] Various examples will now be described more fully with reference to the accompanying drawings in which some examples are illustrated. In the drawings, the thickness of lines, layers, and / or regions may be exaggerated for clarity.
[0024] Therefore, while further examples are capable of various modifications and alternative forms, some specific examples thereof are shown in the drawings and will be described in detail later. However, this detailed description does not limit the additional examples to the specific forms described. Additional examples may cover all modifications, equivalents, and alternatives falling within the scope of the disclosure. Throughout the description of the figures, like numerals refer to like or similar elements, which may be implemented identically or in a modified form while providing the same or similar functionality when compared to each other.
[0025] It will be understood that when an element is referred to as being "connected" or "c...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a semiconductor device and a method for forming a semiconductor device. The semiconductor device includes a transistor arrangement and a diode structure. The diode structure iscoupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. An insulating layer is located vertically between the diode structure and a front side surface of a semiconductor substrate of the semiconductor device. The diode structure includes at least one diode pn-junction. A substrate pn-j unction extends from the front side surface of the semiconductor substrate into the semiconductor substrate between a shielding doping region and an edge doping portion. The edge doping portion is located adjacent to the shielding doping region within the semiconductor substrate. At the front side surface of the semiconductor substrate, the substrate pn-junction is located laterally between the diode pn-junction and a source contact region of the diode structure with the source electrode structure.
Description
technical field [0001] Embodiments relate to concepts for the integration of diodes in semiconductor devices, and in particular to semiconductor devices and methods for forming semiconductor devices. Background technique [0002] Semiconductor devices can be subjected to various influences that can cause damage to the semiconductor devices or even destroy them. For example, semiconductor devices may experience electrostatic discharge or locally excessive current densities, especially during switching or transient events. However, protection methods for semiconductor devices often cause other disadvantages, such as longer switching times of the semiconductor devices, more process steps during production of the semiconductor devices, and / or increased power consumption of the semiconductor devices. It is desirable to protect semiconductor devices from such deleterious effects without deteriorating other performance factors of the semiconductor device. Contents of the inventi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L23/552H01L21/84
CPCH01L21/84H01L23/552H01L27/0255H01L29/7808H01L29/7811H01L29/0615H01L29/0638H01L29/0634H01L29/866H01L27/0727H01L29/0619H01L29/0692H01L29/0696H01L29/1079H01L29/1095H01L29/36H01L29/408H01L29/45H01L29/4966H01L29/66106H01L29/7821H01L29/7823
Inventor F.希尔勒A.马穆德Y.吕埃E.贝西诺巴斯克斯J.魏尔斯
Owner INFINEON TECH DRESDEN