A kind of Si substrate light-emitting diode and manufacturing method
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of inability to meet market demands, low light-emitting efficiency of Si-substrate light-emitting diodes, and the like
Active Publication Date: 2019-03-12
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology
[0005] However, the existing Si-substrate light-emitting diodes have low light extraction efficiency and cannot meet market demand.
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[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0041] In the prior art, when a Si substrate is used instead of a sapphire substrate to make a light-emitting diode, due to the large lattice mismatch between the Si substrate and the nitride material in the epitaxial layer, the stress of the nitride cannot be well resolved, causing some The crystal quality of the source region is poor, which ultimately makes the light extraction efficiency of the LED low.
[0042] In order to solve the problems existing in th...
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The invention discloses an Si substrate light emitting diode and a manufacturing method thereof. The manufacturing method comprises the steps of providing a substrate; forming an SiN buffer layer on the substrate; forming an SiN and AlN mixed gradient layer on a side, facing away from the substrate, of the SiN buffer layer; forming an AlN buffer layer on a side, facing away from the SiN buffer layer, of the SiN and AlN mixed gradient layer; forming a GaN buffer layer, an unintentional doped layer, a first conductive layer, an active region and a second conductive layer sequentially on a side,facing away from the SiN and AlN mixed gradient layer, of the AlN buffer layer, wherein, the SiN and AlN mixed gradient layer comprises a plurality of SiN and AlN mixed layers disposed in sequence. The manufacturing method reduces the nitride stress in an epitaxial layer of a light emitting diode of the Si substrate by providing the plurality of SiN and AlN mixed layers between the SiN buffer layer and the AlN buffer layer, thereby further improving the crystal quality of the active region, and finally effectively improving the light emitting efficiency of the light-emitting diode.
Description
technical field [0001] The present invention relates to the technical field of optoelectronic LEDs, and more specifically relates to a Si substrate light-emitting diode and a manufacturing method thereof. Background technique [0002] With the continuous development of science and technology, light-emitting diodes have been widely used in people's daily life, work and industry, bringing great convenience to people's lives. [0003] Light Emitting Diode (LED) has many advantages such as high efficiency, low energy consumption, long life, no pollution, small size, rich colors, etc., and is an important solid-state lighting device. [0004] In this field, improving the light extraction efficiency of light-emitting diodes and reducing production costs are two major directions for the development of light-emitting diode technology. In terms of reducing production costs, Si substrates are generally used instead of sapphire substrates. [0005] However, the existing Si-substrate l...
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IPC IPC(8): H01L33/00H01L33/12H01L33/26
CPCH01L33/005H01L33/12H01L33/26
Inventor 林志伟陈凯轩卓祥景李俊贤汪洋
Owner XIAMEN CHANGELIGHT CO LTD