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Doped yttrium aluminum garnet laser crystal, bonded crystal, growth method and device

A technology of yttrium aluminum garnet and laser crystal, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of low parasitic oscillation suppression efficiency and low absorption coefficient, and achieve the effect of improving suppression efficiency

Active Publication Date: 2019-10-25
长汀雷生科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The absorption spectrum of the Sm:YAG laser crystal and the emission spectrum of the Nd:YAG laser crystal only slightly overlap, which leads to the 3+ The absorption coefficient of the 1064.15nm emission main peak of the ion in the YAG crystal is low, resulting in a low suppression efficiency for the parasitic oscillation of the Nd:YAG laser crystal

Method used

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  • Doped yttrium aluminum garnet laser crystal, bonded crystal, growth method and device
  • Doped yttrium aluminum garnet laser crystal, bonded crystal, growth method and device
  • Doped yttrium aluminum garnet laser crystal, bonded crystal, growth method and device

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Embodiment 1

[0131] This embodiment provides a doped yttrium aluminum garnet laser crystal whose molecular formula is {Sm 3z Ca 3x Y 3-3x-3z }[Al 2-5y Zr 5y ](Al 3 )O 12 , Where x=0.005, y=0.005, z=0.03.

[0132] The crystal is prepared by putting the growth device provided in the embodiment of the present invention into a crystal growth furnace, and the specific operation steps are as follows:

[0133] According to the stoichiometric ratio of doped yttrium aluminum garnet laser crystal, the purity of the predetermined amount is better than 99.999% of Y 2 O 3 , Al 2 O 3 , Sm 2 O 3 , And CaO and ZrO whose purity is better than 99.99% 2 Mix well and put it in the crucible.

[0134] Use a diameter of 6mm Orient the YAG single crystal or Sm:YAG single crystal as the seed crystal, install the seed crystal vertically on the seed crystal rod of the crystal growth furnace, and adjust the position of the seed crystal rod so that the center of the seed crystal is consistent with the center of the crucible....

Embodiment 2

[0139] This embodiment provides a doped yttrium aluminum garnet laser crystal whose molecular formula is {Sm 3z Ca 3x Y 3-3x-3z }[Al 2-5y Zr 5y ](Al 3 )O 12 , Where x=0.008, y=0.008, z=0.05.

[0140] The crystal is prepared by putting the growth device provided in the embodiment of the present invention into a crystal growth furnace, and the specific operation steps are as follows:

[0141] According to the stoichiometric ratio of doped yttrium aluminum garnet laser crystal, the purity of the predetermined amount is better than 99.999% of Y 2 O 3 , Al 2 O 3 , Sm 2 O 3 , And CaO and ZrO whose purity is better than 99.99% 2 Mix well and put it in the crucible.

[0142] Use a diameter of 6mm Orient the YAG single crystal or Sm:YAG single crystal as the seed crystal, install the seed crystal vertically on the seed crystal rod of the crystal growth furnace, and adjust the position of the seed crystal rod so that the center of the seed crystal is consistent with the center of the crucible....

Embodiment 3

[0147] This embodiment provides a doped yttrium aluminum garnet laser crystal whose molecular formula is {Sm 3z Ca 3x Y 3-3x-3z }[Al 2-5y Zr 5y ](Al 3 )O 12 , Where x=0.01, y=0.01, and z=0.1.

[0148] The crystal is prepared by putting the growth device provided in the embodiment of the present invention into a crystal growth furnace, and the specific operation steps are as follows:

[0149] According to the stoichiometric ratio of doped yttrium aluminum garnet laser crystal, the purity of the predetermined amount is better than 99.999% of Y 2 O 3 , Al 2 O 3 , Sm 2 O 3 , And CaO and ZrO whose purity is better than 99.99% 2 Mix well and put it in the crucible.

[0150] Use a diameter of 6mm Orient the YAG single crystal or Sm:YAG single crystal as the seed crystal, install the seed crystal vertically on the seed crystal rod of the crystal growth furnace, and adjust the position of the seed crystal rod so that the center of the seed crystal is consistent with the center of the crucible...

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Abstract

The invention discloses a yttrium aluminum garnet doped laser crystal, a bonded crystal, a growth method and a device and belongs to the field of laser materials. The yttrium aluminum garnet doped laser crystal is doped with samarium ions and dopant ions which are used for enabling an absorption peak of the yttrium aluminum garnet doped laser crystal to subject to blue shift. Through doping the samarium ions and the dopant ions to achieve the blue shift of the absorption peak, i.e., the blue shift of an absorption spectrum, the overlap ratio of the absorption spectrum of the yttrium aluminum garnet doped laser crystal and an emission spectrum of an Nd:YAG laser crystal can be increased, the absorption coefficient of the yttrium aluminum garnet doped laser crystal to an emission main peak 1064.15nm of Nd<3+> in a YAG crystal can be relatively large, and then, the inhibition efficiency of parasitic oscillation to the Nd:YAG laser crystal is increased.

Description

Technical field [0001] The invention relates to the field of laser materials, in particular to a doped yttrium aluminum garnet laser crystal, a bonded crystal, and a growth method and device thereof. Background technique [0002] In the high-power amplification system containing neodymium-doped yttrium aluminum garnet (Nd:YAG) laser crystal, Nd:YAG laser crystal is used as the active medium, which is prone to laser parasitic oscillation under high pumping conditions, which limits its gain size. Therefore, it is necessary to suppress the parasitic oscillation of the Nd:YAG laser crystal. [0003] In the related art, a samarium-doped yttrium aluminum garnet (Sm:YAG) laser crystal is used to bond with the Nd:YAG laser crystal to suppress the parasitic oscillation of the Nd:YAG laser crystal. Research proved that Nd 3+ The main emission peak of ions at 1064.15nm in YAG crystal can be absorbed by Sm with peaks around 1065-1078nm 3+ Ion absorption, while in the 800nm ​​band of diode pu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B15/00
CPCC30B15/00C30B29/28
Inventor 李洪峰李兴旺莫小刚王永国王军杰杨国利杜秀红韩剑锋毕海
Owner 长汀雷生科技有限责任公司