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Polysilicon manufacturing apparatus

A technology for manufacturing equipment and polysilicon, applied in the fields of silicon compounds, gaseous chemical plating, inorganic chemistry, etc., can solve the problems of reducing the competitiveness of polysilicon, deteriorating the yield and quality of polysilicon, and reducing heat loss and electricity consumption per unit. Effect

Active Publication Date: 2018-05-11
HANWHA CHEMICAL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] When the surface temperature of Si rods is not uniform, popcorns are generated around hot spots, deteriorating the yield and quality of polysilicon
That is, reducing the competitiveness of polysilicon

Method used

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Embodiment Construction

[0060] The present invention will be described in more detail below with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. The drawings and descriptions are to be considered schematic in nature and not restrictive. Throughout the specification, like reference numerals refer to like elements.

[0061] figure 1 It is a cross-sectional view of a polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention. refer to figure 1, the polysilicon manufacturing apparatus according to one embodiment of the present invention includes a cooling jacket 50 in the reactor 10 (Siemens type chemical vapor deposition reactor) to supply the raw material gas and discharge the gas after the chemical vapor deposition reaction to t...

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Abstract

The present invention relates to an apparatus for producing polysilicon which forms the flow of a raw material gas into laminar flow in a chemical vapor deposition reactor. The apparatus for producingpolysilicon according to the present invention comprises: a reactor disposed on a base plate to form a reaction chamber; a pair of electrode terminals installed on the base plate and extended into the reaction chamber; rod filaments installed at the electrode terminals and connected with each other by a rod bridge at the top end so that silicon rods may be formed by chemical vapor deposition of the raw material gas introduced through a gas inlet; and a cooling jacket inserted through an opening provided at the top of the reactor so that it may be supported on the base plate, forming a gas path for discharging the gas after the reaction to be linked to a gas outlet formed on the base plate, and forming a cooling water path outside of the gas path to introduce and circulate cold cooling water from the exterior of the reactor to the cooling water path so that hot cooling water may be discharged to the exterior of the reactor.

Description

technical field [0001] The present invention relates to a polysilicon manufacturing device. [0002] More particularly, the present invention relates to a polycrystalline silicon manufacturing apparatus in which the flow of raw material gas is formed as a laminar flow in a chemical vapor deposition reactor. Background technique [0003] Polycrystalline silicon (ie, polycrystalline silicon) is a component used as a basic material in solar power generation and semiconductor industries, and recently, with the development of the respective industries, the demand for polycrystalline silicon has rapidly increased. [0004] Among the methods for producing polycrystalline silicon, a representative method is a silicon deposition process (or a chemical vapor deposition (CVD) process) in which solid polycrystalline silicon is formed from a silane raw material gas. [0005] The silicon deposition process generates silicon particles by hydrogen reduction reaction and pyrolysis reaction ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035B01J19/08
CPCC01B33/035C23C16/24C23C16/4418C23C16/46B01J19/087B01J19/0013B01J19/0053B01J19/08
Inventor 朴成殷金知雄李熙东
Owner HANWHA CHEMICAL CORPORATION
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