Preparation device and preparation method of micron-sized quartz film

Abstract

The invention discloses a preparation device and a preparation method of a micron-sized quartz film. The preparation device comprises a pressure device, a quartz pipe, a top end heating device, a motion control device, an optical coupling device, a light source device and a spectral acquisition device; the pressure device pressurizes the first end of the quartz pipe, the top end heating device heats the second end of the quartz pipe, and the quartz pipe containing a spherical film structure is formed; the motion control device controls the side end of the quartz pipe containing the spherical film structure to align at the optical coupling device to form a Fabry-Perot interferometer; the light source emitted by the light source device is guide into the Fabry-Perot interferometer to form a spectrum, and the spectrum is transmitted to the spectral acquisition device; the spectral acquisition device analyzes the spectrum, determines the thickness of the side end film and determines the side end film with the thickness meeting the requirement as the micron-sized quartz film. The micron-sized quartz film prepared according to the method is uniform and flat, avoids grinding, is simple tooperate, avoids flammable, explosive or toxic gas, does not need to take measures for preventing environmental pollution and reduces cost.

Description

technical field [0001] The invention belongs to the technical field of optical fiber sensing, and in particular relates to a micron-scale quartz thin film preparation device and a preparation method thereof. Background technique [0002] Quartz thin films are mostly used in optical fiber devices. The existing preparation method of quartz thin films is to use end face grinding or vapor deposition to prepare ultra-thin quartz films. The end face grinding method needs to use a grinding machine to grind the prepared materials. Once a certain part of the grinding If it does not meet the requirements, it needs to be re-grinded, and the operation is cumbersome; the vapor deposition method requires a chemical reaction, and the quartz film obtained by the chemical reaction may be uneven, and the residual gas after the chemical reaction is flammable, explosive or toxic, so it is also Measures to prevent environmental pollution need to be taken, the operation is complicated and the cos...

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Problems solved by technology

[0004] The main purpose of the present invention is to propose a micron-scale quartz thin film preparation device and its preparation method, aiming to solve the problem of existing quartz thin film preparation methods that once a certain part of the grinding does not meet the requirements, it needs to be re-grinded, and the operation is cumbersome. , the quartz film obtained by the chemical reaction may have uneven phenomena, and the residual gas after the chemical reaction is flammable, explosive or toxic, it is necessary to take measures to prevent environmental pollution, complex operation and high cost technical problems

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