Elementary unit chaotic circuit based on HP (high power) memory resistor and capacitor

A basic unit and chaotic circuit technology, applied in CAD circuit design, instruments, electrical digital data processing, etc., can solve the problems of undeveloped, unfound, and backward, and achieve reliable chaotic characteristics, less parameter adjustment, and circuit characteristics reliable effect

Active Publication Date: 2018-05-29
CHONGQING UNIV OF POSTS & TELECOMM
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  • Claims
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Problems solved by technology

Due to the limitations of the technological level at that time and the backwardness of laboratory hardware conditions, Chua could not find suitable materials for the development of memristors.
Therefore, in the following thirty years, memristor has been in the stage of theoretical proposal, and has not been able to develop its physical

Method used

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  • Elementary unit chaotic circuit based on HP (high power) memory resistor and capacitor
  • Elementary unit chaotic circuit based on HP (high power) memory resistor and capacitor
  • Elementary unit chaotic circuit based on HP (high power) memory resistor and capacitor

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Embodiment Construction

[0057] The technical solutions in the embodiments of the present invention will be described clearly and in detail below with reference to the drawings in the embodiments of the present invention. The described embodiments are only some of the embodiments of the invention.

[0058] The technical scheme that the present invention solves the problems of the technologies described above is:

[0059] The physical structure of the HP memristor used in the chaotic circuit based on HP memristor and capacitor basic unit is composed of two Pt electrodes intercalated with a titanium dioxide film containing oxygen vacancies, and its model is shown in the attached figure 1 , where D is the total length of the TiO film, and w is the width of the doped layer. It can be seen from the figure that the total resistance of the memristor is equal to the sum of the resistance of the doped part and the resistance of the non-doped part

[0060]

[0061] where R ON and R OFF are the limit memr...

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Abstract

The invention requests protection of an elementary unit chaotic circuit based on an HP (high power) memory resistor and a capacitor (MC), wherein the elementary unit chaotic circuit comprises two elementary unit circuits in which the HP memory resistor and the capacitor are respectively connected in series and in parallel, firstly, that the two circuits are equivalent circuits is proved; then, a circuit (MC parallel circuit) is taken as a research object, superimposed periodical excitation signals are output to the circuit, the circuit generates chaotic signals, the complex dynamic behavior ofthe circuit is analyzed, and the influence of each parameter on the chaotic circuit is analyzed; finally, simulation is performed according to the circuit to obtain two elementary unit circuit waveforms in which the memory resistor and the capacitor are respectively connected in series and in parallel so as to prove the feasibility of the invention. The method is easy to realize, the components and parts are fewer, the parameter adjustment is less, the application requirement in the field of circuit model and design can be met, and the method adapts to situations in which the chaotic signalsneed to be generated.

Description

technical field [0001] The invention belongs to the technical field of chaos, in particular to a chaotic basic unit circuit. Background technique [0002] It has been a long time since memristor was proposed and widely known. In 1971, the famous scholar Cai Shaotang (L.O.Chua) first proposed the concept of memristor, which is the fourth basic component besides capacitance, inductance and resistance. Memristor M represents the electrical symmetry relationship between magnetic flux φ and charge q, That is, dφ=M(q)dq. Due to the limitations of the technological level at that time and the backwardness of laboratory hardware conditions, Chua could not find suitable materials for the development of memristor. Therefore, for more than 30 years, memristor has been in the stage of theoretical proposal, and its entity has not been developed. It was not until 2008, when Strukov.D.B, a researcher at Hewlett-Packard Laboratory in the United States, published an article titled "The Mis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/30G06F30/367G06F2111/10
Inventor 李清都周园杨芳艳卢青高柯梅花延明珠周雪卿唐春茂
Owner CHONGQING UNIV OF POSTS & TELECOMM
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