IGBT module tube shell and manufacturing method thereof

A tube-shell, anti-cosmic ray technology, applied in electrical components, electric solid-state devices, circuits, etc., can solve the problems of inconvenience of IGBT modules, weak anti-cosmic ray capabilities, and increased size and weight of IGBT modules, so as to reduce the size and weight. Multiply and enhance the effect of cosmic ray protection

Pending Publication Date: 2018-05-29
ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD +1
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Problems solved by technology

[0002] IGBT (Insulated Gate Bipolar Transistor) modules can be used in special fields such as large-scale offshore wind power, deep-sea equipment, national defense and military industry, and aerospace. When used in the field of aerospace, there are a lot of cosmic rays in the environment. However, the conventional metal and non-metallic materials used in the existing IGBT module shells have weak anti-cosmic ray capabilities. In order to prevent the IGBT chips from being damaged by frequent bombardment of high-energy rays on the IGBT chips in the shell, it is usually necessary to greatly increase the thickness of the shell. To improve the anti-cosmic ray ability of the tube shell, this leads to the double increase of the volume and weight of the IGBT module, which brings great inconvenience to the use of the IGBT module

Method used

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  • IGBT module tube shell and manufacturing method thereof
  • IGBT module tube shell and manufacturing method thereof

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Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] In describing the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than in...

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Abstract

The invention discloses an IGBT module tube shell and a manufacturing method thereof, and relates to the technical field of IGBT modules. Use of the IGBT module can be facilitated under the premise ofenhancing the cosmic ray prevention capacity. The IGBT module tube shell comprises a body which is provided with the cosmic ray prevention substance of which the cosmic ray prevention capacity is higher than that of the body. The IGBT module tube shell is used for preventing the bombardment of the high-energy rays to the IGBT chip.

Description

technical field [0001] The invention relates to the technical field of IGBT modules, in particular to an IGBT module tube case and a manufacturing method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) modules can be used in special fields such as large-scale offshore wind power, deep-sea equipment, national defense and military industry, and aerospace. When used in the field of aerospace, there are a lot of cosmic rays in the environment. However, the conventional metal and non-metallic materials used in the existing IGBT module shells have weak anti-cosmic ray capabilities. In order to prevent the IGBT chips from being damaged by frequent bombardment of high-energy rays on the IGBT chips in the shell, it is usually necessary to greatly increase the thickness of the shell. To improve the anti-cosmic ray ability of the tube shell, this leads to the double increase of the volume and weight of the IGBT module, which brings great inconvenience to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/552H01L23/02
CPCH01L23/552H01L23/02
Inventor 陈俊黎小林李义万超群宋自珍王真李炘陈彦
Owner ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD
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