Semiconductor resistor and manufacturing method thereof

Abstract

The invention discloses a semiconductor resistor and a manufacturing method thereof, and relates to the technical field of semiconductors. The method comprises the steps that a substrate structure isprovided, wherein the substrate structure comprises a substrate having a well region and fin structures which are arranged on the well region, and each fin structure comprises a semiconductor fin andan insulating layer which is arranged on the surface of the semiconductor fin; first and second pseudo gate structures are formed on the two end parts of the fin structures; a mask layer having firstand second openings is formed, wherein the first pseudo gate structure and the adjacent part of the fin structures and the first pseudo gate structure are enabled to be exposed by the first opening, and the second pseudo gate structure and the adjacent part of the fin structures and the second pseudo gate structure are enabled to be exposed by the second opening; the exposed part of the fin structures is etched with the mask layer acting as the mask so as to form first and second recessions; the mask layer is removed and semiconductor material is epitaxially grown in the first and second recessions so as to form first and second contact regions; and a first contact member connected to the first contact region and a second contact member connected to the second contact region are formed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor resistor and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, fin field effect transistors (Fin Field Effect Transistor, FinFET) are gradually used in the design of semiconductor devices with smaller critical dimensions. [0003] In the prior art, when manufacturing a semiconductor resistor compatible with the FinFET process, it is usually formed in the following manner: first form a plurality of spaced semiconductor fins (Fin); then remove the entire upper half of each semiconductor fin forming a recess; then epitaxially growing a semiconductor material in the recess; and then forming a contact on the epitaxially grown semiconductor material. [0004] The inventors have found that the epitaxially grown semiconductor materials on adjacent semiconductor fins may merge (merge), for example, the e...

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Problems solved by technology

In this way, some adjacent semiconductor fins may be merged, and some may not be merged, and the consistency of the semiconductor fins is poor, which will affect the size of the final semiconductor resistance formed.

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