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An anti-static mask

An anti-static, photomask technology, applied in optics, originals for opto-mechanical processing, instruments, etc., to avoid damage, improve anti-static damage capability, and reduce the risk of low yield

Active Publication Date: 2022-03-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of these methods require additional cost expenditure

Method used

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Embodiment 1

[0041] In order to solve the technical problems existing at present, the present invention provides an antistatic photomask, which mainly includes:

[0042] transparent substrate;

[0043] A photomask pattern arranged on the transparent substrate;

[0044] a conductive light-shielding layer, disposed on the transparent substrate at the periphery of the mask pattern, and spaced apart from the mask pattern;

[0045] The discharge structure is arranged on the conductive light-shielding layer.

[0046] The antistatic photomask of the present invention is provided with a discharge structure on the conductive light-shielding layer on the periphery of the photomask pattern, which can guide a large amount of static charge accumulated on the large-area continuous conductive light-shielding layer outside the photomask pattern, and place it away from the photomask pattern area. Discharge is carried out, thereby avoiding the damaging effect of electrostatic charge directly discharging o...

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Abstract

The present invention provides an antistatic photomask, comprising: a transparent substrate; a photomask pattern arranged on the transparent substrate; a conductive light-shielding layer arranged on the transparent substrate at the periphery of the photomask pattern, and connected with the The photomask patterns are arranged at intervals; the discharge structure is arranged on the conductive light-shielding layer. The antistatic photomask of the present invention is provided with a discharge structure on the conductive light-shielding layer on the periphery of the photomask pattern, which can guide a large amount of static charge accumulated on the large-area continuous conductive light-shielding layer outside the photomask pattern, and place it away from the photomask pattern area. Discharge is carried out, thereby avoiding the damaging effect of electrostatic charge directly discharging on the outermost cutting line in the past to nearby circuit patterns, reducing the risk of low yield of wafers, and improving the anti-static damage ability of the photomask.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an antistatic photomask. Background technique [0002] In the semiconductor wafer manufacturing industry, the photomask used to transfer graphics to the wafer surface is composed of three parts: quartz glass substrate, surface metal chrome layer, dustproof film and its frame. As we all know, when the glass contacts or rubs against other objects, it will be electrified to generate charges, and there are also a large number of free charges in the surrounding air environment. These charges are easy to gather on the metal chromium layer on the surface of the photomask, resulting in static electricity accumulation. When the accumulated electrostatic charge reaches a certain level, a discharge phenomenon will occur, and the instantaneous energy produced is enough to lift the angle or even burst the metal chromium layer, thereby destroying the mask pattern composed of the metal c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/40
CPCG03F1/40
Inventor 郭伟吴静銮卢盈胡媛张良陈雪银
Owner SEMICON MFG INT (SHANGHAI) CORP
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