Blue-violet LED-based projector
A projector and LED chip technology, applied in the field of projection, can solve the problems of high light source temperature, damage, uneven color display, etc., and achieve the effect of flexible color temperature adjustment, reducing heat dissipation burden, and suppressing total reflection
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Embodiment 1
[0038] See figure 1 , figure 1 A schematic structural diagram of a blue-violet LED-based projector provided by an embodiment of the present invention, the projector 10 includes:
[0039] Blue-violet light LED11, used to generate blue light and purple light;
[0040] A conversion sheet 12, connected to the blue-violet LED 11, for converting the blue light and purple light into red, green and blue primary color light;
[0041] An illuminating device 13, connected to the conversion sheet 12, for mixing the red, green and blue primary colors to form a light beam;
[0042] The projection optical device 14 is connected with the illumination device 13 and is used for projecting an image onto a projection screen according to the light beam.
[0043] Further, see figure 2 , figure 2 It is a schematic structural diagram of a blue-violet light LED provided by an embodiment of the present invention. The blue-violet LED 11 includes: a heat sink 111, an LED chip 112, a first silica ...
Embodiment 2
[0066] This embodiment is based on the first embodiment, focusing on the detailed description of the preparation method of the LED chip.
[0067] Specifically, see Figure 5a ~ Figure 5f , Figure 5a ~ Figure 5f It is a schematic diagram of a method for preparing a GaN material-based two-color LED chip according to an embodiment of the present invention. Specifically, the preparation method comprises the following steps:
[0068] Step 1, select a sapphire substrate 700 with a thickness of 4000nm, such as Figure 5a shown.
[0069] Step 2: At a temperature of 400-600°C, grow a first GaN buffer layer 701 with a thickness of 3000-5000nm on the upper surface of the sapphire substrate 700; A first GaN stable layer 702 with a thickness of 500-1500 nm is grown on the upper surface of the layer 701; at a temperature of 900-1050° C., a thickness of 200-1000 nm is grown on the upper surface of the first GaN stable layer 702 with a doping concentration of 1× 10 18 ~5×10 19 cm -3 ...
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Abstract
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